Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
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TLDR
In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.Abstract:
We present a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Calculations are made using a nonparabolic effective mass energy band model. Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models. The effects of alloy scattering on the electron transport physics are examined. The steady state velocity field curves and low field mobilities are calculated for representative compositions of these alloys at different temperatures and ionized impurity concentrations. A field dependent mobility model is provided for both ternary compounds AlGaN and InGaN. The parameters for the low and high field mobility models for these ternary compounds are extracted and presented. The mobility models can be employed in simulations of devices that incorporate the ternary III-nitrides.read more
Citations
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Journal ArticleDOI
Dependence of efficiencies in GaN-based vertical blue light-emitting diodes on the thickness and doping concentration of the n-GaN layer.
TL;DR: By combining the results of EE, IQE, and LEE, wall-plug efficiency (WPE) of the vertical LED is calculated, and the optimum thickness and doping concentration of the n-GaN layer is found for obtaining the maximum WPE.
Journal ArticleDOI
Numerical Simulation of InGaN Schottky Solar Cell
Sidi Ould Saad Hamady,Sidi Ould Saad Hamady,Abdoulwahab Adaine,Abdoulwahab Adaine,Nicolas Fressengeas,Nicolas Fressengeas +5 more
TL;DR: In this paper, a comprehensive numerical simulation, using mathematically rigorous optimization approach based on state-of-the-art optimization algorithms, is used to find the optimum geometrical and physical parameters that yield the best efficiency of a Schottky solar cell within the achievable device fabrication range.
Journal ArticleDOI
Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure
Hyeon-Tak Kwak,Seung-Bo Chang,Hyun Jung Kim,Kyu-Won Jang,Hyung Sup Yoon,Sang-Heung Lee,Jong-Won Lim,Hyun-Seok Kim +7 more
TL;DR: In this paper, a high-performance AlGaN/GaN high electron mobility transistor (HEMT) with an inner field plate (IFP) structure was presented.
Journal ArticleDOI
On the Monte Carlo Description of Hot Carrier Effects and Device Characteristics of III-N LEDs
TL;DR: In this paper, fully self-consistent Monte Carlo (MC) simulations are developed to investigate the effects of hot carriers in device operation and to outline the shortcomings of the drift-diffusion (DD) and quasiequilibrium conditions in modeling multiquantum well (MQW) LEDs.
Journal ArticleDOI
Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride
TL;DR: In this paper, a review of electron transport in wide energy gap semiconductors is presented, focusing on the electron transport that occurs within the wurtzite and zinc-blende phases of gallium nitride and indium oxide.
References
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Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Journal ArticleDOI
Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
Ionicity of the Chemical Bond in Crystals
TL;DR: The role of quantum-mechanical sum rules and spectral moments in constructing simplified models of bond and band behavior is explored in this article, where a wide range of physical properties including crystal structure, energy bands, elastic constants, ionization energies, and impurity states are discussed.
Journal ArticleDOI
Semiconductor ultraviolet detectors
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
Journal ArticleDOI
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
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