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Journal ArticleDOI

Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

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TLDR
In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.
Abstract
We present a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Calculations are made using a nonparabolic effective mass energy band model. Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models. The effects of alloy scattering on the electron transport physics are examined. The steady state velocity field curves and low field mobilities are calculated for representative compositions of these alloys at different temperatures and ionized impurity concentrations. A field dependent mobility model is provided for both ternary compounds AlGaN and InGaN. The parameters for the low and high field mobility models for these ternary compounds are extracted and presented. The mobility models can be employed in simulations of devices that incorporate the ternary III-nitrides.

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Citations
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Journal ArticleDOI

A novel structure to enable low local electric field and high on-state current in GaN photoconductive semiconductor switches

TL;DR: In this paper, a new high-power semi-insulating GaN PCSS structure, which is a quantum well coupled with a trench PCSS (QWTPCSS), is presented.
Proceedings ArticleDOI

Electrical Performances and Physics Based Analysis of 650V E-mode GaN Devices at High Temperatures

TL;DR: In this article, the performance of commercial cascode GaN FET and p-GaN HEMT was investigated and compared and the differences of device structures lead to quite different high temperatures performances.
Proceedings ArticleDOI

Device level simulation of second harmonic generation in 6-mm noncentrosymmetric semiconductor

TL;DR: In this article, a numerical solution for the second harmonic generation inside a 6mm n-type noncentrosymmetric semiconductor subjected to highly intense transverse magnetic (TM) laser wave in a semiconductor grounded slab taking the field-carrier interaction into account is presented.
Dissertation

Gallium Nitride and Gallium Arsenide Based Devices for Power Switching and Photonics Application

Chenjie Tang
TL;DR: In this article, the effects of buffer traps and passivation layers on current collapse and breakdown voltage of gallium nitride (GaN) and gallium arsenide (GaAs) compound semiconductors have been investigated.
Journal ArticleDOI

Simulation of the gallium nitride-based pulse mode X-ray detector for short-time applications

TL;DR: In this article, a GaN-based X-ray detector was simulated and the capability of the GaN Xray detector for applications with short-time Xray exposure was analyzed.
References
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Journal ArticleDOI

GaN, AlN, and InN: A review

TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Journal ArticleDOI

Gan : processing, defects, and devices

TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI

Ionicity of the Chemical Bond in Crystals

TL;DR: The role of quantum-mechanical sum rules and spectral moments in constructing simplified models of bond and band behavior is explored in this article, where a wide range of physical properties including crystal structure, energy bands, elastic constants, ionization energies, and impurity states are discussed.
Journal ArticleDOI

Semiconductor ultraviolet detectors

TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
Journal ArticleDOI

Comparison of 6H-SiC, 3C-SiC, and Si for power devices

TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
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