Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
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TLDR
In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.Abstract:
We present a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Calculations are made using a nonparabolic effective mass energy band model. Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models. The effects of alloy scattering on the electron transport physics are examined. The steady state velocity field curves and low field mobilities are calculated for representative compositions of these alloys at different temperatures and ionized impurity concentrations. A field dependent mobility model is provided for both ternary compounds AlGaN and InGaN. The parameters for the low and high field mobility models for these ternary compounds are extracted and presented. The mobility models can be employed in simulations of devices that incorporate the ternary III-nitrides.read more
Citations
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Journal ArticleDOI
Optimal design of the multiple-apertures-GaN-based vertical HEMTs with $$\hbox {SiO}_{2}$$SiO2 current blocking layer
TL;DR: In this paper, the effects of the thickness of CBL layer and the aperture length on the electrical and breakdown characteristics of GaN vertical HEMTs with silicon dioxide current blocking layer (CBL) were simulated by using two-dimensional quantum-mechanically corrected device simulation.
Journal ArticleDOI
Electrothermal DC characterization of GaN on Si MOS-HEMTs
TL;DR: In this paper, the DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150°C.
Posted Content
Comment on "Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop" (Phys. Rev. Lett. 110, 177406 (2013))
Francesco Bertazzi,Michele Goano,Xiangyu Zhou,Marco Calciati,Giovanni Ghione,Masahiko Matsubara,Enrico Bellotti +6 more
TL;DR: In this paper, the authors present full-band Monte Carlo simulations suggesting that the higher-energy peaks in the measured EDCs are probably uncorrelated with the carrier distribution in the active region, which would not imply that Auger recombination and possibily Auger-induced leakage play a negligible role in LED droop, but that an Auger signature cannot be recovered from the experiment performed on the LED structure under study.
Journal ArticleDOI
Modelling and Simulation of Normally-off AlGaN/GaN MOS-HEMTs
TL;DR: In this article, the effect of the resistivity of the GaN:C layer, the channel mobility and the use of high dielectrics on the electrical characteristics of the transistor has been examined.
Journal ArticleDOI
Modeling heat generation in high power density nanometer scale GaAs/InGaAs/AlGaAs PHEMT
TL;DR: In this paper, a model of heat generation rate for two-dimensional semiconductor devices is established and the number of net optical-phonon emission in the presence of different applied voltages is presented.
References
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Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Journal ArticleDOI
Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
Ionicity of the Chemical Bond in Crystals
TL;DR: The role of quantum-mechanical sum rules and spectral moments in constructing simplified models of bond and band behavior is explored in this article, where a wide range of physical properties including crystal structure, energy bands, elastic constants, ionization energies, and impurity states are discussed.
Journal ArticleDOI
Semiconductor ultraviolet detectors
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
Journal ArticleDOI
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
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