Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
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TLDR
In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.Abstract:
We present a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Calculations are made using a nonparabolic effective mass energy band model. Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models. The effects of alloy scattering on the electron transport physics are examined. The steady state velocity field curves and low field mobilities are calculated for representative compositions of these alloys at different temperatures and ionized impurity concentrations. A field dependent mobility model is provided for both ternary compounds AlGaN and InGaN. The parameters for the low and high field mobility models for these ternary compounds are extracted and presented. The mobility models can be employed in simulations of devices that incorporate the ternary III-nitrides.read more
Citations
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Journal ArticleDOI
Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations
TL;DR: In this paper, a self-heating measurement for AlGaN∕GaN heterostructure field effect transistor grown on SiC was carried out using micro-Raman scattering excited by above band gap ultraviolet and below band gap visible laser light.
Journal ArticleDOI
Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications
TL;DR: In this paper, an enhancement-mode GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 10-nm T-gate length and a high-k TiO2 gate dielectric was proposed.
Journal ArticleDOI
Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer
TL;DR: In this article, a spacer layer of AlN in the interface of AlGaN/AlN/GAN/GaN HEMT was introduced to increase the 2DEG concentration and mobility.
Journal ArticleDOI
Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes
TL;DR: In this article, a number of possible design approaches intended for optimizing the internal quantum efficiency (IQE) of light-emitting diodes based on InGaN quantum wells (QWs) grown along the c-axis emitting in the near-ultraviolet region.
Journal ArticleDOI
A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review
TL;DR: In this paper, the electron transport that occurs within the wurtzite phases of gallium nitride, aluminum oxide, indium oxide, and zinc oxide has been studied.
References
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Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Journal ArticleDOI
Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
Ionicity of the Chemical Bond in Crystals
TL;DR: The role of quantum-mechanical sum rules and spectral moments in constructing simplified models of bond and band behavior is explored in this article, where a wide range of physical properties including crystal structure, energy bands, elastic constants, ionization energies, and impurity states are discussed.
Journal ArticleDOI
Semiconductor ultraviolet detectors
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
Journal ArticleDOI
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
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