Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
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In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.Abstract:
We present a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Calculations are made using a nonparabolic effective mass energy band model. Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models. The effects of alloy scattering on the electron transport physics are examined. The steady state velocity field curves and low field mobilities are calculated for representative compositions of these alloys at different temperatures and ionized impurity concentrations. A field dependent mobility model is provided for both ternary compounds AlGaN and InGaN. The parameters for the low and high field mobility models for these ternary compounds are extracted and presented. The mobility models can be employed in simulations of devices that incorporate the ternary III-nitrides.read more
Citations
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Journal ArticleDOI
Effects of physical parameters of graded AlGaN buffer on DC characteristic and short-channel effects in AlInN/GaN high-electron mobility transistors
TL;DR: In this paper , the effects of the physical parameters of the graded buffer [bottom Al-content (xbot) and buffer thickness (tbuf)] on the direct-current characteristics and short-channel effects (SCEs) of Al0.83In0.17N/GaN HEMTs are investigated.
Book ChapterDOI
Comprehensive Analytical Modeling of N-polar GaN/AlGaN Insulated Gate HEMTs with and without Polarization Neutralization Layer
Saptarsi Ghosh,Syed Mukulika Dinara,Ankush Bag,Apurba Chakraborty,Partha Mukhopadhyay,Sanjib Kabi,Dhrubes Biswas +6 more
TL;DR: In this paper, the drain current and transconductance of N-polar GaN/AlxGa1-xN insulated gate (MIS) HEMTs are theoretically analyzed.
Velocity Overshoot Effects and Scaling Issues
TL;DR: In this article, the authors examine transport in AlGaN-GaN heterojunction FETs to examine whether velocity overshoot effects occur, and show that very high scattering rates when combined with unusual field profiles, result in a change in the local transport mechanism, and, in the source-gate region, combine to reduce/nullify velocity-overshoot effects.
Proceedings ArticleDOI
Frequency dependences of NDC for nitride compound calculated by monte-carlo techniques
TL;DR: In this paper, the oscillation efficiency of nitride diodes operating in limitation of accumulation of the space charge (LSA) in the wide taraherz frequency range has been investigated.
Posted Content
Theoretical study of current density for InN and GaN-based Gunn diode operating in transit-time mode
TL;DR: In this article, the frequency response and corresponding current density of a wurtzite phase Indium Nitride (InN)-based vertical configuration Gunn diode at 1 \mu m active length were reported.
References
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Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Journal ArticleDOI
Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
Ionicity of the Chemical Bond in Crystals
TL;DR: The role of quantum-mechanical sum rules and spectral moments in constructing simplified models of bond and band behavior is explored in this article, where a wide range of physical properties including crystal structure, energy bands, elastic constants, ionization energies, and impurity states are discussed.
Journal ArticleDOI
Semiconductor ultraviolet detectors
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
Journal ArticleDOI
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
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