Journal ArticleDOI
Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing
TLDR
In this article, the authors used transient thermoreflectance imaging (TTI) to measure the temperature rise of the passivated gate metal measured by TTI and the averaged gate temperature monitored by gate resistance thermometry (GRT).Abstract:
The development of steady-state thermal characterization techniques for AlGaN/GaN high-electron mobility transistors (HEMTs) has been used to measure the device’s peak temperature under DC conditions. Despite these methods enabling the accurate quantification of the device’s effective thermal resistance and power density dependence, transient thermometry techniques are necessary to understand the nanoscale thermal transport within the active GaN layer where the highly localized joule heating occurs. One technique that has shown the ability to achieve this is transient thermoreflectance imaging (TTI). The accuracy of TTI is based on using the correct thermoreflectance coefficient. In the past, alternative techniques have been used to adjust the thermoreflectance coefficient to match the correct temperature rise in the device. This paper provides a new method to accurately determine the thermoreflectance coefficient of a given surface and is validated via an electrical method: gate resistance thermometry (GRT). Close agreement is shown between the temperature rise of the passivated gate metal measured by TTI and the averaged gate temperature monitored by GRT. Overall, TTI can now be used to thermally map GaN HEMTs under pulsed conditions providing simultaneously a submicrosecond temporal resolution and a submicrometer spatial resolution.read more
Citations
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Journal ArticleDOI
β-Gallium oxide power electronics
Andrew J. Green,James A. Speck,Grace Xing,Peter Moens,Fredrik Allerstam,Krister Gumaelius,Thomas Neyer,Andrea Arias-Purdue,Vivek Mehrotra,Akito Kuramata,Kohei Sasaki,Shinya Watanabe,Kimiyoshi Koshi,John D. Blevins,Oliver Bierwagen,Sriram Krishnamoorthy,Kevin Lee,Aaron R. Arehart,Adam T. Neal,Shin Mou,Steven A. Ringel,Avinash Kumar,Ankit Sharma,Krishnendu Ghosh,Uttam Singisetti,Wenshen Li,Kelson D. Chabak,Kyle J. Liddy,Ahmad E. Islam,Siddharth Rajan,Samuel Graham,Sukwon Choi,Zhen Chen,Masataka Higashiwaki +33 more
TL;DR: This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community to enhance the state-ofthe-art device performance and allow for efficient, high-power, commercially scalable microelectronic systems using the newest semiconductor platform.
Journal ArticleDOI
Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications
Seung Kyu Oh,James Spencer Lundh,Shahab Shervin,Bikramjit Chatterjee,Dong Kyu Lee,Sukwon Choi,Joon Seop Kwak,Jae-Hyun Ryou +7 more
TL;DR: In this article, the authors present a comprehensive review of thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia.
Journal ArticleDOI
2D Materials for Universal Thermal Imaging of Micro- and Nanodevices: An Application to Gallium Oxide Electronics
James Spencer Lundh,Tianyi Zhang,Yuewei Zhang,Zhanbo Xia,Maxwell Wetherington,Yu Lei,Ethan Kahn,Siddharth Rajan,Mauricio Terrones,Sukwon Choi +9 more
TL;DR: In this paper, the authors highlight the flexibility of two-dimensional materials for advancing current technologies through the introduction of 2D Raman thermography (2DRT) 2DRT combines monolayer materials and Ram
Journal ArticleDOI
The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs
TL;DR: In this article, the authors improved the thermal dissipation of GaN/Si high-electron-mobility transistors by depositing copper (Cu) below aluminum nitride (AlN) filled etched back GaN-on-Si HEMTs.
Journal ArticleDOI
ESD Reliability of AlGaN/GaN HEMT Technology
TL;DR: In this article, the role of Schottky gate and MESA was investigated using special test structures, and a unique power-law-like behavior was found for AlGaN/GaN HEMTs.
References
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Journal ArticleDOI
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Journal ArticleDOI
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Journal ArticleDOI
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