Journal ArticleDOI
Unified Compact Model Covering Drift-Diffusion to Ballistic Carrier Transport
Sourabh Khandelwal,Harshit Agarwal,Pragya Kushwaha,Juan Pablo Duarte,Aditya Sankar Medury,Yogesh Singh Chauhan,Sayeef Salahuddin,Chenming Hu +7 more
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TLDR
In this article, a unified compact model for carrier transport from the drift-diffusion to the ballistic regime is presented, which accounts for carrier degeneracy effects in ballistic transport and is implemented into the industry standard compact models for FinFETs, fully depleted silicon-on-insulator (FDSOI) devices and bulk MOSFET.Abstract:
In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier degeneracy effects in ballistic transport. The model is implemented into the industry standard compact models for FinFETs, fully depleted silicon-on-insulator (FDSOI) devices and bulk MOSFETs: 1) Berkeley Spice model for common multi-gate; 2) Berkeley Spice model for independent multi-gate; and 3) BSIM6. The model is validated with experimental data and TCAD simulations for FDSOI devices, FinFETs, and bulk MOSFETs.read more
Citations
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Journal ArticleDOI
A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters
Adelmo Ortiz-Conde,Andrea Sucre-González,Fabian Zarate-Rincon,Reydezel Torres-Torres,Roberto S. Murphy-Arteaga,Juin J. Liou,Francisco J. García-Sánchez +6 more
TL;DR: This article reviews and assesses 18 of the extraction methods currently used to determine the values of parasitic series resistances and mobility degradation from the measured drain current.
Journal ArticleDOI
RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model
TL;DR: In this article, the performance of the BSIM-IMG model for fully depleted silicon-on-insulator (FDSOI) transistors is discussed with experimental data.
Journal ArticleDOI
Unified Compact Model for Nanowire Transistors Including Quantum Effects and Quasi-Ballistic Transport
TL;DR: In this paper, a surface potential-based compact model for nanowire FETs is presented, which considers 1-D electrostatics along with the effect of multiple energy subbands.
Journal ArticleDOI
Compact Modeling of Surface Potential, Charge, and Current in Nanoscale Transistors Under Quasi-Ballistic Regime
TL;DR: In this article, a new analytical model for FETs working in the quasi-ballistic regime is proposed, which is based on a calculation of the charge density along the channel which is then used to solve Poisson's equation to get the variation of the channel potential.
Journal ArticleDOI
Compact Modeling of Cross-Sectional Scaling in Gate-All-Around FETs: 3-D to 1-D Transition
TL;DR: This is the first compact model capturing cross-sectional size-dependent dimensional crossover (3-D to 1-D) in , and provides a compact model for VLSI circuit simulation, especially for analog and RF circuits that will be seriously affected by the new humps and peaks introduced by the subbands.
References
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Book
Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
Ballistic metal-oxide-semiconductor field effect transistor
TL;DR: In this article, the authors proposed the ballistic transport of carriers in MOSFETs, and presented the currentvoltage characteristics of the ballistic n-channel MOS-FET.
Journal ArticleDOI
Elementary scattering theory of the Si MOSFET
TL;DR: In this article, a simple one-flux scattering theory of the silicon MOSFET is introduced, where currentvoltage characteristics are expressed in terms of scattering parameters rather than a mobility.
Journal ArticleDOI
Low ballistic mobility in submicron HEMTs
TL;DR: In this paper, the field effect mobility at room temperature in 0.15-/spl mu/m gate AlGaAs/GaAs HEMTs cannot exceed 3000 cm/sup 2/V-s.
Journal ArticleDOI
A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters
TL;DR: In this article, a simple semi-empirical model ID(VGS, VDS) for short-channel MOSFETs applicable in all regions of device operation is presented.