Open Access
Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TLDR
In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.Abstract:
First‐principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal‐field splitting parameters ΔCF of −217, 42, and 41 meV, respectively, and spin–orbit splitting parameters Δ0 of 19, 13, and 1 meV, respectively. In the zinc blende structure ΔCF≡0 and Δ0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions.read more
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Journal ArticleDOI
THE ELECTRONIC BAND STRUCTURE OF AlN, AlSb, AlAs AND THEIR TERNARY ALLOYS WITH In
Rezek Mohammad,Şenay Katırcıoğlu +1 more
TL;DR: In this paper, the electronic band structure of AlN, AlSb, AlAs and their ternary alloys with In has been investigated by ETB for sp3d2 basis and nearest neighbor interactions.
Journal ArticleDOI
Optical spectroscopic study of electric field sharing effects in piezoelectric GaN/Al0.65Ga0.35N multi-quantum well structures
TL;DR: In this paper, the authors studied a series of GaN/Al 0.65 Ga 0.35 N samples of varying well and barrier widths by cathodoluminescence and photoluminecence spectroscopy.
DissertationDOI
Physics-based multiscale modeling of III-nitride light emitters
TL;DR: In this article, the theoretical and numerical investigations of III-nitride bulk and quantum structures, following a bottom-up approach aimed at modeling and understanding photoluminecence and electroluminescence in these structures, are presented.
DissertationDOI
Non-radiative loss mechanisms in InGaN/GaN multiple quantum well light-emitting diodes
TL;DR: In this article, state-of-the-art InGaN/GaN multiple quantum well (MQW) structures are investigated in two power regimes, under intense quasi-resonant, optical excitation.
Journal ArticleDOI
Enhancement of optical performance of near‐UV nitride‐based light emitting diodes with different aluminum composition barrier structure
C. K. Wang,Y. Z. Chiou,C. C. Hsiang,D. H. Lee,W. Y. Yan,W. S. Chen,C. M. Cheng,K. H. Chen,J. J. Tang,J. Lee +9 more
TL;DR: In this article, the InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet (UV) light-emitting diodes (LEDs) with different aluminum compositions in the barrier layers are investigated and fabricated.
References
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Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
Journal ArticleDOI
Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.