Open Access
Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TLDR
In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.Abstract:
First‐principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal‐field splitting parameters ΔCF of −217, 42, and 41 meV, respectively, and spin–orbit splitting parameters Δ0 of 19, 13, and 1 meV, respectively. In the zinc blende structure ΔCF≡0 and Δ0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions.read more
Citations
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Valence and conduction band offsets of β-Ga2O3/AlN heterojunction
Haiding Sun,C. G. Torres Castanedo,Kaikai Liu,Kuang-Hui Li,Wenzhe Guo,Ronghui Lin,Xinwei Liu,Jingtao Li,Xiaohang Li +8 more
TL;DR: In this paper, a very thin β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition.
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Zinc-blende AlN and GaN under pressure: structural, electronic, elastic and piezoelectric properties
TL;DR: In this paper, a theoretical study of the structural, elastic, electronic and piezoelectric properties of zinc-blende AlN and GaN under the pressure effect is presented.
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Radiation and polarization properties of free-exciton emission from AlN (0001) surface
TL;DR: In this article, angle-dependent photoluminescence (PL) measurement was performed on free-exciton emission from AlN (0001) surface and the polarization ratio was estimated to be 0.995.
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Growth and band gap of the filled tetrahedral semiconductor LiMgN
TL;DR: The cubic AlN-like compound, LiMgN, can be considered as a zinc blende-like lattice partially filled with He-like Li+ interstitials as discussed by the authors.
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A TCAD-based modeling of GaN/InGaN/Si solar cells
Muhammad Nawaz,Ashfaq Ahmad +1 more
TL;DR: In this article, the theoretical efficiency of double-junction GaN/InGaN/cSi tandem solar cells is investigated using two-dimensional numerical computer simulation (i.e., TCAD).
References
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
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Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
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When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
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Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.