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Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TLDR
In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.Abstract:
First‐principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal‐field splitting parameters ΔCF of −217, 42, and 41 meV, respectively, and spin–orbit splitting parameters Δ0 of 19, 13, and 1 meV, respectively. In the zinc blende structure ΔCF≡0 and Δ0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions.read more
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Journal ArticleDOI
Valence band structures and optical transitions of Ga1−xInxNyAs1−y/GaAs compressively strained quantum wells
TL;DR: In this article, the electronic structures of the Ga1−xInxNyAs1−y/GaAs compressively strained quantum wells (QW) were investigated using 6×6 k·p Hamiltonian including the heavy hole, light hole and spin-orbit splitting band.
Book ChapterDOI
Properties of III–V Nitrides Substrates and Homoepitaxial Layers
TL;DR: The unique combination of extreme values of fundamental physical and chemical properties rank the III-V nitride semiconductor system as one of the most promising material systems for the fabrication of a variety of optical and electronic devices capable of performing at extreme conditions of power, frequency, temperature, and in harsh environments as mentioned in this paper.
Journal ArticleDOI
Exciton Spectra of AlN Epitaxial Films
Takeyoshi Onuma,Shigefusa F. Chichibu,T. Sota,Keiichiro Asai,S. Sumiya,T. Shibata,Masaaki Tanaka +6 more
TL;DR: In this article, the excitonic resonance energies in a C-plane AlN epilayer on the (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy were determined as a function of temperature by means of optical reflectance (OR) and cathodoluminescence (CL) measurements.
Book ChapterDOI
Defects in Indium-Related Nitride Compounds and Structural Design of AlN/GaN Superlattices
TL;DR: In this paper, the electronic and optical properties of III-nitride compounds were analyzed by applying of ab initio approach, which can analyze the electronic structures of In-related compounds as well as other semiconductors.
References
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Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
Journal ArticleDOI
Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.