Open Access
Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TLDR
In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.Abstract:
First‐principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal‐field splitting parameters ΔCF of −217, 42, and 41 meV, respectively, and spin–orbit splitting parameters Δ0 of 19, 13, and 1 meV, respectively. In the zinc blende structure ΔCF≡0 and Δ0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions.read more
Citations
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Journal ArticleDOI
Microscopic gain theory for group III nitride semiconductor quantum wells
TL;DR: In this article, the gain/absorption properties of III-V nitride quantum well systems are computed microscopically using multi-band semiconductor Bloch equations in second Born approximation in the Markovian limit.
Journal ArticleDOI
Study of electronic properties and bonding configuration at the BN/SiC interface
TL;DR: In this paper, the electronic properties and bonding configuration at the interface between cubic (zinc blende) BN and 3C-SiC were studied using the first principle linear muffin-tin orbital (LMTO) method based on local density functional theory.
Journal ArticleDOI
First principles calculations of the hypothetical interface BN/XC (X = Si, Ge, Sn)
A. Benzair,H. Aourag +1 more
TL;DR: In this paper, the electronic structure and bonding configuration at the interface between cubic (zinc-blende) BN and XC were studied using the full-potential linearized augmented plane wave approach within the density functional theory in the local density approximation.
DissertationDOI
Design, Synthesis and Characterization of Biocompatible Quantum Dots for Application in Biophysics
Book ChapterDOI
AIN Epitaxial Layers for UV Photonics
H.X. Jiang,J.Y. Lin +1 more
TL;DR: In this paper, the authors proposed a new approach to further improve material quality with reduced dislocation density and unintentional impurities and improved surface morphologies in Al-rich AlGaN alloys, which would enhance the doping efficiency and device performance.
References
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Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
Journal ArticleDOI
Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.