Open Access
Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TLDR
In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.Abstract:
First‐principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal‐field splitting parameters ΔCF of −217, 42, and 41 meV, respectively, and spin–orbit splitting parameters Δ0 of 19, 13, and 1 meV, respectively. In the zinc blende structure ΔCF≡0 and Δ0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions.read more
Citations
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Origin of exciton emissions from an AlN p-n junction light-emitting diode
Yoshitaka Taniyasu,Makoto Kasu +1 more
TL;DR: In this article, an AlN light-emitting diode with an improved emission efficiency of 1×10−4% was observed at 5.94 eV and 6.10 eV by current injection.
Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures This review covers the physics, epitaxial growth, fabrication, and characterization of optoelectronic devices for use in video players and other consumer electronics as well as in commercial systems.
Daniel Hofstetter,Esther Baumann,Fabrizio R. Giorgetta,Ricardo Théron,Hong Wu,William J. Schaff,Jahan M. Dawlaty,Paul A. George,Lester F. Eastman,Farhan Rana,P. K. Kandaswamy,Fabien Guillot,Eva Monroy +12 more
TL;DR: The physics, epitaxial growth, fabrication, and characterization of optoelectronic devices based on intersubband transitions in the AlN/GaN material system, as well as optically pumped light emitters, are reported on.
Journal ArticleDOI
Photodetectors based on intersubband transitions using III-nitride superlattice structures.
Daniel Hofstetter,Esther Baumann,Fabrizio R. Giorgetta,Ricardo Théron,Hong Wu,William J. Schaff,Jahan M. Dawlaty,Paul A. George,Lester F. Eastman,Farhan Rana,P. K. Kandaswamy,Sylvain Leconte,Eva Monroy +12 more
TL;DR: The recent progress on the fabrication of near-infrared photodetectors based on intersubband transitions in AlN/GaN superlattice structures is reviewed.
Journal ArticleDOI
Optimization of the active-Layer structure for the deep-UV AlGaN light-emitting diodes
Man-Fang Huang,Tsung-Hung Lu +1 more
TL;DR: In this article, the dependence of the active layer structure on the performance of the deep-UV AlGaN light-emitting diodes was theoretically investigated with an APSYS simulation program.
Journal ArticleDOI
Spin–orbit splittings in AlN, GaN and InN
Manuel Cardona,N. E. Christensen +1 more
TL;DR: In this paper, the spin-orbit splittings of the top valence bands of AlN, GaN, and InN crystallized in the zinc blendestructure were calculated using the LMTO-LDA method.
References
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
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Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
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When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
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Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.