Open Access
Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TLDR
In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.Abstract:
First‐principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal‐field splitting parameters ΔCF of −217, 42, and 41 meV, respectively, and spin–orbit splitting parameters Δ0 of 19, 13, and 1 meV, respectively. In the zinc blende structure ΔCF≡0 and Δ0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions.read more
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Dissertation
Structure, morphology, optical and electrochemical properties of indium- and aluminum-based nitride thin films deposited by plasma-assisted reactive evaporation / Mahdi Alizadeh Kouzeh Rash
Kouzeh Rash,Mahdi Alizadeh +1 more
TL;DR: In this paper, a plasma assisted reactive evaporation system was developed for the growth of indium and aluminum-based nitride thin films, and the effects of the most influential growth parameters were investigated with respect to the structure, elemental composition, morphology and optical properties of these films.
Journal ArticleDOI
Intersubband absorption at λ∼1.3 μm in optimized GaN/AlGaN Bragg-confined structures
TL;DR: In this article, a method is developed for the analysis and extraction of the optimal structural parameters of GaN/AlGaN Bragg-confined structures, in order to maximize the intersubband absorption on bound-above-the-barrier transitions at wavelengths in the near infrared spectral range.
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Influence of indium cluster on the high and constant background electron density in ternary InxGa1-xN alloys
TL;DR: In this article, the formation energy of nitrogen vacancy (VN) surprisingly becomes nearly constant for alloys with relatively high In concentration, indicating that neither HN nor interstitial hydrogen (Hi) are the main sources of the experiment observed high and constant electron density in the alloys.
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Quantification of graphene based core/shell quantum dots from first principles
TL;DR: In this article, the density functional calculations of core/shell quantum dot systems are performed to study the electronic structure of recently proposed graphene/graphane-based core and shell quantum dots, which exhibit quantized carrier energy levels.
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Electric Fields and Surface Fermi Level in Undoped GaN/AlN Two-Dimensional Hole Gas Heterostructures
Łukasz Janicki,Reet Chaudhuri,Samuel James Bader,Huili Grace Xing,Debdeep Jena,Robert Kudrawiec +5 more
TL;DR: In this article, Xing et al. showed that holes can be obtained in a GaN channel without Mg doping by using a 2D hole gas (2DHG) at the top GaN layer due to the polarization.
References
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Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
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Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
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When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
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Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.