Open Access
Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TLDR
In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.Abstract:
First‐principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal‐field splitting parameters ΔCF of −217, 42, and 41 meV, respectively, and spin–orbit splitting parameters Δ0 of 19, 13, and 1 meV, respectively. In the zinc blende structure ΔCF≡0 and Δ0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions.read more
Citations
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
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Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
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When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
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Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.
References
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Impact of silicon incorporation on the formation of structural defects in AlN
M. Hermann,Florian Furtmayr,Francisco M. Morales,Oliver Ambacher,Martin Stutzmann,Martin Eickhoff +5 more
TL;DR: In this paper, the impact of Si impurities on the structural properties of AlN, grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire is studied.
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Effect of nitrogen on the exciton binding energy in GaxIn1−xNyAs1−y/GaAs quantum well
TL;DR: In this article, the binding energy of ground state exciton in Ga x In 1− x N y As 1− y /GaAs single quantum well is studied theoretically, using a variational envelope-function procedure using simple two-band model.
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Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells
TL;DR: In this article, the optical properties of InGaN/GaN multiple quantum wells (MQWs) have been studied by means of photoluminescence (PL) and time-resolved (TRPL) spectroscopy, and the radiative and nonradiative recombination lifetimes were evaluated as a function of the excitation energy density.
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Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m /(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation
Xin-he Jiang,Jun-jie Shi,Min Zhang,Hongxia Zhong,Pu Huang,Yi-min Ding,Tong-jun Yu,Bo Shen,Jing Lu,Xihua Wang +9 more
TL;DR: In this article, the authors investigated the microscopic mechanism of valence band inversion and light polarization in Al-rich AlxGaN alloy using the Heyd-Scuseria-Ernzerhof hybrid functional, local density approximation with 1/2 occupation, and the Perdew-Burke-Ebrahimi functional, in which the spin-orbit coupling effect is included.
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Revisit of the band gaps of rutile SnO 2 and TiO 2 : a first-principles study
TL;DR: In this paper, the authors used first-principles calculations with different levels of computational methods and functionals within the density functional theory to investigate the long-standing band gap problem for SnO2.