Open Access
Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TLDR
In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.Abstract:
First‐principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal‐field splitting parameters ΔCF of −217, 42, and 41 meV, respectively, and spin–orbit splitting parameters Δ0 of 19, 13, and 1 meV, respectively. In the zinc blende structure ΔCF≡0 and Δ0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions.read more
Citations
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
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Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
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When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
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Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.
References
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Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
John E. Northrup,Christopher L. Chua,Z. Yang,Thomas Wunderer,Michael Kneissl,N. M. Johnson,Tim Kolbe +6 more
TL;DR: In this paper, the transition from transverse electric (TE) polarization to transverse magnetic (TM) polarization as the wavelength decreases is investigated for AlGaN-based multi-quantum-well light emitters.
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Tight-binding and k?p models for the electronic structure of Ga(In)NAs and related alloys
TL;DR: In this paper, the authors used the tight-binding method to understand the electronic structure of GaInNAs alloys, and used it to derive a modified k?p model for the electronic structures of GaNAs/GaAs heterostructures.
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Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
TL;DR: In this paper, the authors presented nonlocal pseudopotential calculations based on realistic, effective atomic potentials of the wurtzite phase of GaN, InN, and AlN.
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Effective mass of InN epilayers
S. P. Fu,Yang-Fang Chen +1 more
TL;DR: In this paper, the authors report on the study of plasma edge absorption of InN epilayers with free electron concentration ranging from 3.5×1017 to 5×1019cm−3.
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Small valence-band offsets at GaN/InGaN heterojunctions
TL;DR: In this paper, the authors investigated the band lineups using first-principles calculations with explicit inclusion of strains and atomic relaxations at the interface and found that the natural valence-band offset between unstrained InN and GaN is 3 eV.