Open Access
Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TLDR
In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.Abstract:
First‐principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal‐field splitting parameters ΔCF of −217, 42, and 41 meV, respectively, and spin–orbit splitting parameters Δ0 of 19, 13, and 1 meV, respectively. In the zinc blende structure ΔCF≡0 and Δ0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions.read more
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Proposal to Use GaAs(114) Substrates for Improvement of the Optical Transition Probability in Nitride Semiconductor Quantum Wells
TL;DR: The dependence of the spontaneous emission lifetime of excitons in InGaN/GaN quantum disks (QDs) on the crystalline orientation is calculated in this paper, and it is shown that the lifetime in the conventional c-oriented QDs is ten times as long as that in QDs tilted by 30° and 90°, and the difference is pronounced by increasing the QDs thickness.
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Evidence for Oxygen DX Centers in AlGaN
Matthew D. McCluskey,Noble M. Johnson,C. G. Van de Walle,David P. Bour,Michael Kneissl,Wladek Walukiewicz +5 more
TL;DR: In this article, experimental and theoretical evidence is presented for oxygen DX centers in AlxGa1−xN, consistent with the emergence of a deep DX level from the conduction band.
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Photocurrent measurements of InGaN/GaN quantum wells under hydrostatic and uniaxial pressure
TL;DR: In this article, the transition from heavy-hole (HH) and crystal-field split (CH) bands to the conduction band was investigated and it was shown that the electric fields are about 25% lower than the calculated values.
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Optical Properties of InGaN Epitaxial Layers Studied Using a Disordered Quantum-Wire Model
Ruisheng Zheng,Tsunemasa Taguchi +1 more
TL;DR: In this article, the optical properties of InGaN epitaxial layers based on a disordered quantum-wire model were analyzed. And the authors showed that the main features of thick InN epilayers that are grown under constant growth conditions may be explained qualitatively by the theory of disordered Quantum wires.
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The Valence Band Offset of an Al 0.17 Ga 0.83 N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy
Wan Xiao-Jia,Wang Xiaoliang,Wang Xiaoliang,Xiao Hongling,Wang Cuimei,Feng Chun,Deng Qing-Wen,QU Shen-Qi,Zhang Jing-wen,Hou Xun,Cai Shujun,Feng Zhihong +11 more
TL;DR: The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction was determined to be 0.13 ± 0.07 eV by x-ray photoelectron spectroscopy as mentioned in this paper.
References
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
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Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
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When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
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Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.