Open Access
Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TLDR
In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.Abstract:
First‐principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal‐field splitting parameters ΔCF of −217, 42, and 41 meV, respectively, and spin–orbit splitting parameters Δ0 of 19, 13, and 1 meV, respectively. In the zinc blende structure ΔCF≡0 and Δ0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions.read more
Citations
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
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Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
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When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
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Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.
References
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Journal ArticleDOI
Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
P. F. Zhang,X. L. Liu,Rq Q. Zhang,H. B. Fan,H. P. Song,H.Y. Wei,Cm M. Jiao,S. Y. Yang,Q. S. Zhu,Zg G. Wang +9 more
TL;DR: In this article, the authors measured the valence band offset of MgO/InN heterojunction by x-ray photoelectron spectroscopy and determined it to be 1.59 +/- 0.23 eV.
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Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency
TL;DR: In this article, the authors demonstrate that a AlN/GaN superlattice with one or two GaN monolayers is efficient for near-band-edge C-plane emission of deep-ultraviolet light-emitting diodes.
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Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations
Mitsuru Funato,Yoichi Kawakami +1 more
TL;DR: In this paper, the spontaneous emission lifetime of 1s heavy hole excitons in InGaN∕GaN strained quantum wells (QWs) was investigated in terms of exciton localization and polarization-induced electric fields.
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Defects in AlN as candidates for solid-state qubits
TL;DR: In this paper, point defects and defect complexes in AlN were investigated for potential applicability as single spin centers and solid-state qubits analogous to those observed in diamond and SiC.
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Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy
Takeyoshi Onuma,Tomohiko Shibata,Kei Kosaka,Koyu Asai,Shigeaki Sumiya,Mitsuhiro Tanaka,T. Sota,Akira Uedono,Shigefusa F. Chichibu +8 more
TL;DR: In this paper, exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2O3 substrates.