Open Access
Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TLDR
In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.Abstract:
First‐principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal‐field splitting parameters ΔCF of −217, 42, and 41 meV, respectively, and spin–orbit splitting parameters Δ0 of 19, 13, and 1 meV, respectively. In the zinc blende structure ΔCF≡0 and Δ0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions.read more
Citations
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Journal ArticleDOI
Determination of Band Structures of InN/GaN Interfaces by Synchrotron Radiation Hard X-ray Photoemission Spectroscopy
Yasushi Toyoshima,Koji Horiba,Masaharu Oshima,Jitsuo Ohta,Hiroshi Fujioka,Hisayuki Miki,Shigenori Ueda,Yoshiyuki Yamashita,Hideki Yoshikawa,Keisuke Kobayashi +9 more
TL;DR: In this article, the authors determined the valence band discontinuities of InN/Mg:GaN and inN/Si:GAN heterostructures by hard x-ray photoemission spectroscopy.
Journal ArticleDOI
Characteristic Temperature Estimation for GaN-Based Lasers
TL;DR: In this article, the authors have estimated the characteristic temperature T0 of GaN-based vertical-cavity surface-emitting laser with the density matrix theory including intraband relaxation broadening.
Journal ArticleDOI
Energy relaxation by hot carriers in wurtzite GaN epilayers
TL;DR: In this article, hot carrier energy relaxation processes studied by acoustic phonon emission in wurtzite GaN epilayers, using the heat pulse technique, were investigated using Al bolometers biased at their superconducting transition.
DissertationDOI
MOVPE Growth of AlN and AlGaN/AlN Quantum Wells and their Optical Polarization Properties
TL;DR: In this paper, the authors propose a method to solve the problem of "uniformity" and "uncertainty" in the context of education.iii.iiiiii.
Journal ArticleDOI
Stress influence on band-edge luminescence properties of 4H-AlN
TL;DR: In this paper, the band-edge luminescence properties of 4H-AlN under biaxial and uniaxially stress were studied using the first-principle method.
References
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Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
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Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
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When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
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Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.