Open Access
Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TLDR
In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.Abstract:
First‐principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal‐field splitting parameters ΔCF of −217, 42, and 41 meV, respectively, and spin–orbit splitting parameters Δ0 of 19, 13, and 1 meV, respectively. In the zinc blende structure ΔCF≡0 and Δ0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions.read more
Citations
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
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Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
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When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
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Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.
References
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Prediction of electron energies in metal oxides.
Aron Walsh,Keith T. Butler +1 more
TL;DR: This Account discusses the application of atomistic modeling techniques, covering the spectrum from classical to quantum descriptions, to explore the alignment of electron energies between materials, and stresses the need for a universal description of theignment of band energies for materials design from first-principles.
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Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy
Philip David King,Tim D. Veal,P. H. Jefferson,Christopher F McConville,Tao Wang,Peter J. Parbrook,Huaixian Lu,William J. Schaff +7 more
TL;DR: In this paper, the valence band offset of wurtzite-InN∕AlN (0001) heterojunctions was determined by x-ray photoelectron spectroscopy to be 1.52±0.17eV.
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AlxGa1−xN/GaN band offsets determined by deep-level emission
TL;DR: In this paper, the compositional dependence of the optical properties of AlxGa1−xN(0
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Si-doped GaN /AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths
Fabien Guillot,Edith Bellet-Amalric,Eva Monroy,Maria Tchernycheva,Laurent Nevou,L. Doyennette,F. H. Julien,Le Si Dang,T. Remmele,Martin Albrecht,Tomohiko Shibata,Mitsuhiro Tanaka +11 more
TL;DR: In this article, the authors report on the controlled growth by molecular beam epitaxy of 20-period Si-doped GaN∕AlN quantum dot (QD) superlattices, in order to tailor their intraband absorption within the 1.3-1.55μm telecommunication spectral range.
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Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys AlxGa1−xN, InxGa1−xN, and InxAl1−xN
Michele Goano,Enrico Bellotti,Enrico Ghillino,Carlo Garetto,Giovanni Ghione,Kevin F. Brennan +5 more
TL;DR: In this article, the authors presented detailed information on the band structures of the III-nitride wurtzite ternary alloys, computed through the virtual crystal approximation approach.