Proceedings ArticleDOI
Vertical GaN Split Gate Trench MOSFET with Improved High Frequency FOM
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TLDR
In this article, a new vertical GaN split gate trench MOSFET with a conventional trench gate MOS-FET for 600 V switching applications has been proposed, which exhibits 7 times lower HF-FOM (C rss ×R on ) and 3 times lower FOM (Q GD × R on ) without increase in the specific on-resistance, when compared to that of conventional MOS FET.Abstract:
Using TCAD Simulation, we present a systematic analysis and comparison of a new vertical GaN split gate trench MOSFET (SGT-MOSFET) with a conventional trench gate MOS-FET for 600 V switching applications We have calibrated our simulation models to match the experimental data as available in the literature We show that the SGT-MOSFET exhibits 7 times lower HF-FOM (C rss ×R on ) and 3 times lower HF-FOM (Q GD × R on ) without increase in the specific on-resistance, when compared to that of conventional MOSFET We, also have presented the main process steps required for the fabrication of the proposed device These improvements are important for reducing the conduction and switching losses, and making high frequency power conversion more efficientread more
Citations
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Journal ArticleDOI
A comparative analysis and an optimized structure of vertical GaN floating gate trench MOSFET for high-frequency FOM
TL;DR: In this paper , a vertical GaN floating gate trench MOSFET was designed to obtain an enhanced high-frequency figure of merit (HF-FOM) than the conventional SGT- and TG-MOSFs.
Journal ArticleDOI
An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance
TL;DR: In this article , the authors proposed a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT) for power conversion applications, where two parallel gates and a field plate are introduced vertically on the sidewalls and connected, respectively, to the gate and source.
Journal ArticleDOI
An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance
TL;DR: In this article , the authors proposed a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT) for power conversion applications, where two parallel gates and a field plate are introduced vertically on the sidewalls and connected to the gate and source.
References
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Proceedings ArticleDOI
Analysis of 1.2 kV 4H-SiC Trench-Gate MOSFETs with Thick Trench Bottom Oxide
TL;DR: In this paper, a 1.2 kV-rated trench-gate SiC power MOSFET with thick bottom oxide is analyzed and compared with previous trenchgate MOS-FET structures, which has superior specific on-resistance compared with most planar-gate structures.
Patent
Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage
TL;DR: Trenched vertical power field effect transistors with improved on-resistance and/or breakdown voltage are fabricated in this article, where the modulation of the current flow of the transistor occurs in the lateral channel, whereas the voltage is predominantly held in the vertical direction in the off-state.
Proceedings ArticleDOI
Efficient integrated DC-DC power converters - Advanced technologies and new challenges
TL;DR: It is shown that heterogeneous chip-scale integration of GaN power FETs, silicon CMOS control, integrated power inductors, and microchip capacitors using the new high-density, low-loss Quilt Packaging™ (QP) promises efficiency performance breakthroughs never seen before with integrated silicon DC-DC power converter chips.
Patent
Vertical Doping and Capacitive Balancing for Power Semiconductor Devices
TL;DR: In this article, vertical doping in power semiconductor devices and methods for making such dopant profiles are described, which include providing a semiconductor substrate, providing an epitaxial layer on the substrate, comprising a bottom portion containing a first conductivity type dopant in a substantially constant, first concentration throughout the bottom portion; and an upper portion having a second concentration lower than the first concentration.