Showing papers by "James Hone published in 2020"

Correlated electronic phases in twisted bilayer transition metal dichalcogenides

Abstract: In narrow electron bands in which the Coulomb interaction energy becomes comparable to the bandwidth, interactions can drive new quantum phases. Such flat bands in twisted graphene-based systems result in correlated insulator, superconducting and topological states. Here we report evidence of low-energy flat bands in twisted bilayer WSe2, with signatures of collective phases observed over twist angles that range from 4 to 5.1°. At half-band filling, a correlated insulator appeared that is tunable with both twist angle and displacement field. At a 5.1° twist, zero-resistance pockets were observed on doping away from half filling at temperatures below 3 K, which indicates a possible transition to a superconducting state. The observation of tunable collective phases in a simple band, which hosts only two holes per unit cell at full filling, establishes twisted bilayer transition metal dichalcogenides as an ideal platform to study correlated physics in two dimensions on a triangular lattice. Tunable correlated states are observed in twist bilayer WSe2 over a range of twist angles, with signatures of superconductivity for a twist of 5.1°.

Correlated insulating states at fractional fillings of moiré superlattices.

Abstract: Quantum particles on a lattice with competing long-range interactions are ubiquitous in physics; transition metal oxides1,2, layered molecular crystals3 and trapped-ion arrays4 are a few examples. In the strongly interacting regime, these systems often show a rich variety of quantum many-body ground states that challenge theory2. The emergence of transition metal dichalcogenide moire superlattices provides a highly controllable platform in which to study long-range electronic correlations5-12. Here we report an observation of nearly two dozen correlated insulating states at fractional fillings of tungsten diselenide/tungsten disulfide moire superlattices. This finding is enabled by a new optical sensing technique that is based on the sensitivity to the dielectric environment of the exciton excited states in a single-layer semiconductor of tungsten diselenide. The cascade of insulating states shows an energy ordering that is nearly symmetric about a filling factor of half a particle per superlattice site. We propose a series of charge-ordered states at commensurate filling fractions that range from generalized Wigner crystals7 to charge density waves. Our study lays the groundwork for using moire superlattices to simulate a wealth of quantum many-body problems that are described by the two-dimensional extended Hubbard model3,13,14 or spin models with long-range charge-charge and exchange interactions15,16.

Disassembling 2D van der Waals crystals into macroscopic monolayers and reassembling into artificial lattices

Abstract: Two-dimensional materials from layered van der Waals (vdW) crystals hold great promise for electronic, optoelectronic, and quantum devices, but technological implementation will be hampered by the lack of high-throughput techniques for exfoliating single-crystal monolayers with sufficient size and high quality. Here, we report a facile method to disassemble vdW single crystals layer by layer into monolayers with near-unity yield and with dimensions limited only by bulk crystal sizes. The macroscopic monolayers are comparable in quality to microscopic monolayers from conventional Scotch tape exfoliation. The monolayers can be assembled into macroscopic artificial structures, including transition metal dichalcogenide multilayers with broken inversion symmetry and substantially enhanced nonlinear optical response. This approach takes us one step closer to mass production of macroscopic monolayers and bulk-like artificial materials with controllable properties.

Visualization of moiré superlattices

Abstract: Moire superlattices in van der Waals heterostructures have given rise to a number of emergent electronic phenomena due to the interplay between atomic structure and electron correlations. Indeed, electrons in these structures have been recently found to exhibit a number of emergent properties that the individual layers themselves do not exhibit. This includes superconductivity1,2, magnetism3, topological edge states4,5, exciton trapping6 and correlated insulator phases7. However, the lack of a straightforward technique to characterize the local structure of moire superlattices has thus far impeded progress in the field. In this work we describe a simple, room-temperature, ambient method to visualize real-space moire superlattices with sub-5-nm spatial resolution in a variety of twisted van der Waals heterostructures including, but not limited to, conducting graphene, insulating boron nitride and semiconducting transition metal dichalcogenides. Our method uses piezoresponse force microscopy, an atomic force microscope modality that locally measures electromechanical surface deformation. We find that all moire superlattices, regardless of whether the constituent layers have inversion symmetry, exhibit a mechanical response to out-of-plane electric fields. This response is closely tied to flexoelectricity wherein electric polarization and electromechanical response is induced through strain gradients present within moire superlattices. Therefore, moire superlattices of two-dimensional materials manifest themselves as an interlinked network of polarized domain walls in a non-polar background matrix. An electromechanical response to an out-of-plane electric field in van der Waals heterostructures enables direct visualization of moire superlattices using piezoresponse force microscopy.

Excitons in strain-induced one-dimensional moiré potentials at transition metal dichalcogenide heterojunctions.

Abstract: The possibility of confining interlayer excitons in interfacial moire patterns has recently gained attention as a strategy to form ordered arrays of zero-dimensional quantum emitters and topological superlattices in transition metal dichalcogenide heterostructures. Strain is expected to play an important role in the modulation of the moire potential landscape, tuning the array of quantum dot-like zero-dimensional traps into parallel stripes of one-dimensional quantum wires. Here, we present real-space imaging of unstrained zero-dimensional and strain-induced one-dimensional moire patterns along with photoluminescence measurements of the corresponding excitonic emission from WSe2/MoSe2 heterobilayers. Whereas excitons in zero-dimensional moire traps display quantum emitter-like sharp photoluminescence peaks with circular polarization, the photoluminescence emission from excitons in one-dimensional moire potentials shows linear polarization and two orders of magnitude higher intensity. These results establish strain engineering as an effective method to tailor moire potentials and their optoelectronic response on demand. The combination of piezoresponse force microscopy and optical measurements reveals the influence of strain in the formation of one-dimensional moire patterns and the resulting behaviour of interlayer excitons in van der Waals heterostructures.

Low-loss composite photonic platform based on 2D semiconductor monolayers

Abstract: The optical properties of transition metal dichalcogenides (TMDs) are known to change dramatically with doping near their excitonic resonances. However, little is known about the effect of doping on the optical properties of TMDs at wavelengths far from these resonances, where the material is transparent and therefore could be leveraged in photonic circuits. We demonstrate the strong electrorefractive response of monolayer tungsten disulfide (WS2) at near-infrared wavelengths (deep in the transparency regime) by integrating it on silicon nitride photonic structures to enhance the light–matter interaction with the monolayer. We show that the doping-induced phase change relative to the change in absorption (|∆n/∆k|) is ~125, which is significantly higher than the |∆n/∆k| observed in materials commonly employed for silicon photonic modulators, including Si and III–V on Si, while accompanied by negligible insertion loss. Strong electrorefractive effects in semiconductor transition metal dichalcogenides (TMDs) at near-infrared wavelengths, where the TMDs are transparent, are observed and used to demonstrate photonic devices based on a composite SiN–TMD platform with large phase modulation, minimal induced loss and low electrical power consumption.

Imaging strain-localized excitons in nanoscale bubbles of monolayer WSe2 at room temperature.

Abstract: In monolayer transition-metal dichalcogenides, localized strain can be used to design nanoarrays of single photon sources. Despite strong empirical correlation, the nanoscale interplay between excitons and local crystalline structure that gives rise to these quantum emitters is poorly understood. Here, we combine room-temperature nano-optical imaging and spectroscopic analysis of excitons in nanobubbles of monolayer WSe2 with atomistic models to study how strain induces nanoscale confinement potentials and localized exciton states. The imaging of nanobubbles in monolayers with low defect concentrations reveals localized excitons on length scales of around 10 nm at multiple sites around the periphery of individual nanobubbles, in stark contrast to predictions of continuum models of strain. These results agree with theoretical confinement potentials atomistically derived from the measured topographies of nanobubbles. Our results provide experimental and theoretical insights into strain-induced exciton localization on length scales commensurate with exciton size, realizing key nanoscale structure–property information on quantum emitters in monolayer WSe2. A combination of room-temperature nano-optical imaging and spectroscopy and atomistic theory reveals highly localized exciton states in nanobubbles of localized strain in monolayer WSe2.

Stripe phases in WSe2/WS2 moir\'e superlattices

Abstract: Stripe phases, in which the rotational symmetry of charge density is spontaneously broken, occur in many strongly correlated systems with competing interactions. One representative example is the copper-oxide superconductors, where stripe order is thought to be relevant to the mechanism of high-temperature superconductivity. Identifying and studying the stripe phases in conventional strongly correlated systems are, however, challenging due to the complexity and limited tunability of these materials. Here we uncover stripe phases in WSe2/WS2 moir\'e superlattices with continuously gate-tunable charge densities by combining optical anisotropy and electronic compressibility measurements. We find strong electronic anisotropy over a large doping range peaked at 1/2 filling of the moir\'e superlattice. The 1/2-state is incompressible and assigned to a (insulating) stripe crystal phase. It can be continuously melted by thermal fluctuations around 35 K. The domain configuration revealed by wide-field imaging shows a preferential alignment along the high-symmetry axes of the moir\'e superlattice. Away from 1/2 filling, we observe additional stripe crystals at commensurate filling 1/4, 2/5 and 3/5. The anisotropy also extends into the compressible regime of the system at incommensurate fillings, indicating the presence of electronic liquid crystal states. The observed filling-dependent stripe phases agree with the theoretical phase diagram of the extended Hubbard model on a triangular lattice in the flat band limit. Our results demonstrate that two-dimensional semiconductor moir\'e superlattices are a highly tunable platform to study the stripe phases and their interplay with other symmetry breaking ground states.

Imaging strain-localized exciton states in nanoscale bubbles in monolayer WSe2 at room temperature

Abstract: In monolayer transition metal dichalcogenides, quantum emitters are associated with localized strain that can be deterministically applied to create designer nano-arrays of single photon sources. Despite an overwhelming empirical correlation with local strain, the nanoscale interplay between strain, excitons, defects and local crystalline structure that gives rise to these quantum emitters is poorly understood. Here, we combine room-temperature nano-optical imaging and spectroscopy of excitons in nanobubbles of localized strain in monolayer WSe2 with atomistic structural models to elucidate how strain induces nanoscale confinement potentials that give rise to highly localized exciton states in 2D semiconductors. Nano-optical imaging of nanobubbles in low-defect monolayers reveal localized excitons on length scales of approximately 10 nm at multiple sites along the periphery of individual nanobubbles, which is in stark contrast to predictions of continuum models of strain. These results agree with theoretical confinement potentials that are atomistically derived from measured topographies of existing nanobubbles. Our results provide one-of-a-kind experimental and theoretical insight of how strain-induced confinement - without crystalline defects - can efficiently localize excitons on length scales commensurate with exciton size, providing key nanoscale structure-property information for quantum emitter phenomena in monolayer WSe2.

Electrical characterization of 2D materials-based field-effect transistors

Abstract: Two-dimensional (2D) materials hold great promise for future nanoelectronics as conventional semiconductor technologies face serious limitations in performance and power dissipation for future technology nodes. The atomic thinness of 2D materials enables highly scaled field-effect transistors (FETs) with reduced short-channel effects while maintaining high carrier mobility, essential for high-performance, low-voltage device operations. The richness of their electronic band structure opens up the possibility of using these materials in novel electronic and optoelectronic devices. These applications are strongly dependent on the electrical properties of 2D materials-based FETs. Thus, accurate characterization of important properties such as conductivity, carrier density, mobility, contact resistance, interface trap density, etc is vital for progress in the field. However, electrical characterization methods for 2D devices, particularly FET-related measurement techniques, must be revisited since conventional characterization methods for bulk semiconductor materials often fail in the limit of ultrathin 2D materials. In this paper, we review the common electrical characterization techniques for 2D FETs and the related issues arising from adapting the techniques for use on 2D materials.

Deep moir\'e potentials in twisted transition metal dichalcogenide bilayers

Abstract: In twisted bilayers of semiconducting transition metal dichalcogenides (TMDs), a combination of structural rippling and electronic coupling gives rise to periodic moire potentials that can confine charged and neutral excitations. Here, we report experimental measurements of the structure and spectroscopic properties of twisted bilayers of WSe2 and MoSe2 in the H-stacking configuration using scanning tunneling microscopy (STM). Our experiments reveal that the moire potential in these bilayers at small angles is unexpectedly large, reaching values of above 300 meV for the valence band and 150 meV for the conduction band - an order of magnitude larger than theoretical estimates based on interlayer coupling alone. We further demonstrate that the moire potential is a non-monotonic function of moire wavelength, reaching a maximum at around a 13nm moire period. This non-monotonicity coincides with a drastic change in the structure of the moire pattern from a continuous variation of stacking order at small moire wavelengths to a one-dimensional soliton dominated structure at large moire wavelengths. We show that the in-plane structure of the moire pattern is captured well by a continuous mechanical relaxation model, and find that the moire structure and internal strain rather than the interlayer coupling is the dominant factor in determining the moire potential. Our results demonstrate the potential of using precision moire structures to create deeply trapped carriers or excitations for quantum electronics and optoelectronics.

Abundance of correlated insulating states at fractional fillings of WSe$_{2}$/WS$_{2}$ moir\'e superlattices

Abstract: Quantum particles on a lattice with competing long-range interactions are ubiquitous in physics. Transition metal oxides, layered molecular crystals and trapped ion arrays are a few examples out of many. In the strongly interacting regime, these systems often exhibit a rich variety of quantum many-body ground states that challenge theory. The emergence of transition metal dichalcogenide moire heterostructures provides a highly controllable platform to study long-range electronic correlations. Here we report an observation of nearly two-dozen correlated insulating states at fractional fillings of a WSe$_{2}$/WS$_{2}$ moire heterostructure. The discovery is enabled by a new optical sensing technique that is built on the sensitivity to dielectric environment of the exciton excited states in single-layer semiconductor WSe$_{2}$. The cascade of insulating states exhibits an energy ordering which is nearly symmetric about filling factor of half electron (or hole) per superlattice site. We propose a series of charge-ordered states at commensurate filling fractions that range from generalized Wigner crystals to charge density waves. Our study lays the groundwork for utilizing moire superlattices to simulate a wealth of quantum many-body problems that are described by the two-dimensional t-V model or spin models with long-range charge-charge and exchange interactions.

Moir\'e metrology of energy landscapes in van der Waals heterostructures.

Abstract: The emerging field of twistronics, which harnesses the twist angle between two-dimensional materials, represents a promising route for the design of quantum materials, as the twist-angle-induced superlattices offer means to control topology and strong correlations. At the small twist limit, and particularly under strain, as atomic relaxation prevails, the emergent moire superlattice encodes elusive insights into the local interlayer interaction. Here we introduce moire metrology as a combined experiment-theory framework to probe the stacking energy landscape of bilayer structures at the 0.1 meV/atom scale, outperforming the gold-standard of quantum chemistry. Through studying the shapes of moire domains with numerous nano-imaging techniques, and correlating with multi-scale modelling, we assess and refine first-principle models for the interlayer interaction. We document the prowess of moire metrology for three representative twisted systems: bilayer graphene, double bilayer graphene and H-stacked $MoSe_2/WSe_2$. Moire metrology establishes sought after experimental benchmarks for interlayer interaction, thus enabling accurate modelling of twisted multilayers.

Moir\'e heterostructures as a condensed matter quantum simulator

Abstract: Twisted van der Waals heterostructures have latterly received prominent attention for their many remarkable experimental properties, and the promise that they hold for realising elusive states of matter in the laboratory. We propose that these systems can, in fact, be used as a robust quantum simulation platform that enables the study of strongly correlated physics and topology in quantum materials. Among the features that make these materials a versatile toolbox are the tunability of their properties through readily accessible external parameters such as gating, straining, packing and twist angle; the feasibility to realize and control a large number of fundamental many-body quantum models relevant in the field of condensed-matter physics; and finally, the availability of experimental readout protocols that directly map their rich phase diagrams in and out of equilibrium. This general framework makes it possible to robustly realize and functionalize new phases of matter in a modular fashion, thus broadening the landscape of accessible physics and holding promise for future technological applications.

Near-Unity Light Absorption in a Monolayer WS2 Van der Waals Heterostructure Cavity.

Abstract: Excitons in monolayer transition-metal-dichalcogenides (TMDs) dominate their optical response and exhibit strong light-matter interactions with lifetime-limited emission While various approaches have been applied to enhance light-exciton interactions in TMDs, the achieved strength have been far below unity, and a complete picture of its underlying physical mechanisms and fundamental limits has not been provided Here, we introduce a TMD-based van der Waals heterostructure cavity that provides near-unity excitonic absorption, and emission of excitonic complexes that are observed at ultralow excitation powers Our results are in full agreement with a quantum theoretical framework introduced to describe the light-exciton-cavity interaction We find that the subtle interplay between the radiative, nonradiative and dephasing decay rates plays a crucial role, and unveil a universal absorption law for excitons in 2D systems This enhanced light-exciton interaction provides a platform for studying excitonic phase-transitions and quantum nonlinearities and enables new possibilities for 2D semiconductor-based optoelectronic devices

Charge-Transfer Plasmon Polaritons at Graphene/α-RuCl3 Interfaces.

Abstract: Nanoscale charge control is a key enabling technology in plasmonics, electronic band structure engineering, and the topology of two-dimensional materials. By exploiting the large electron affinity of α-RuCl3, we are able to visualize and quantify massive charge transfer at graphene/α-RuCl3 interfaces through generation of charge-transfer plasmon polaritons (CPPs). We performed nanoimaging experiments on graphene/α-RuCl3 at both ambient and cryogenic temperatures and discovered robust plasmonic features in otherwise ungated and undoped structures. The CPP wavelength evaluated through several distinct imaging modalities offers a high-fidelity measure of the Fermi energy of the graphene layer: EF = 0.6 eV (n = 2.7 × 1013 cm-2). Our first-principles calculations link the plasmonic response to the work function difference between graphene and α-RuCl3 giving rise to CPPs. Our results provide a novel general strategy for generating nanometer-scale plasmonic interfaces without resorting to external contacts or chemical doping.

Continuous Wave Sum Frequency Generation and Imaging of Monolayer and Heterobilayer Two-Dimensional Semiconductors.

Abstract: We report continuous-wave second harmonic and sum frequency generation from two-dimensional transition metal dichalcogenide monolayers and their heterostructures with pump irradiances several order...

Odd- and even-denominator fractional quantum Hall states in monolayer WSe 2

Abstract: Monolayer semiconducting transition-metal dichalcogenides (TMDs) represent a unique class of two-dimensional (2D) electron systems. Their atomically thin structure facilitates gate tunability just like graphene does, but unlike graphene, TMDs have the advantage of a sizable band gap and strong spin-orbit coupling. Measurements under large magnetic fields have revealed an unusual Landau level (LL) structure1-3, distinct from other 2D electron systems. However, owing to the limited sample quality and poor electrical contact, probing the lowest LLs has been challenging, and observation of electron correlations within the fractionally filled LL regime has not been possible. Here, through bulk electronic compressibility measurements, we investigate the LL structure of monolayer WSe2 in the extreme quantum limit, and observe fractional quantum Hall states in the lowest three LLs. The odd-denominator fractional quantum Hall sequences demonstrate a systematic evolution with the LL orbital index, consistent with generic theoretical expectations. In addition, we observe an even-denominator state in the second LL that is expected to host non-Abelian statistics. Our results suggest that the 2D semiconductors can provide an experimental platform that closely resembles idealized theoretical models in the quantum Hall regime.

Femtosecond exciton dynamics in WSe2 optical waveguides.

Abstract: Van-der Waals (vdW) atomically layered crystals can act as optical waveguides over a broad range of the electromagnetic spectrum ranging from Terahertz to visible. Unlike common Si-based waveguides, vdW semiconductors host strong excitonic resonances that may be controlled using non-thermal stimuli including electrostatic gating and photoexcitation. Here, we utilize waveguide modes to examine photo-induced changes of excitons in the prototypical vdW semiconductor, WSe2, prompted by femtosecond light pulses. Using time-resolved scanning near-field optical microscopy we visualize the electric field profiles of waveguide modes in real space and time and extract the temporal evolution of the optical constants following femtosecond photoexcitation. By monitoring the phase velocity of the waveguide modes, we detect incoherent A-exciton bleaching along with a coherent optical Stark shift in WSe2. The authors use time-resolved scanning near-field optical microscopy to probe the ultrafast excitonic processes and their impact on waveguide operation in transition metal dichalcogenide crystals. They observe significant modulation of the complex index by monitoring waveguide modes on the fs time scale, and identify both coherent and incoherent manipulations of WSe2 excitonic resonances.

Nonlinear twistoptics at symmetry-broken interfaces

Abstract: Broken symmetries induce strong nonlinear optical responses in materials and at interfaces Twist angle can give complete control over the presence or lack of inversion symmetry at a crystal interface, and is thus an appealing knob for tuning nonlinear optical systems In contrast to conventional nonlinear crystals with rigid lattices, the weak interlayer coupling in van der Waals (vdW) heterostructures allows for arbitrary selection of twist angle, making nanomechanical manipulation of fundamental interfacial symmetry possible within a single device Here we report highly tunable second harmonic generation (SHG) from nanomechanically rotatable stacks of bulk hexagonal boron nitride (BN) crystals, and introduce the term twistoptics to describe studies of optical properties in dynamically twistable vdW systems We observe SHG intensity modulated by a factor of more than 50, polarization patterns determined by moire interface symmetry, and enhanced conversion efficiency for bulk crystals by stacking multiple pieces of BN joined by symmetry-broken interfaces Our study provides a foundation for compact twistoptics architectures aimed at efficient, scalable, and tunable frequency-conversion, and demonstrates SHG as a robust probe of buried vdW interfaces

Crossover between Strongly-coupled and Weakly-coupled Exciton Superfluids

Abstract: In fermionic systems, superconductivity and superfluidity are enabled through the condensation of fermion pairs. The nature of this condensate can be tuned by varying the pairing strength, with weak coupling yielding a BCS-like condensate and strong coupling resulting in a BEC-like process. However, demonstration of this cross-over has remained elusive in electronic systems. Here we study graphene double-layers separated by an atomically thin insulator. Under applied magnetic field, electrons and holes couple across the barrier to form bound magneto-excitons whose pairing strength can be continuously tuned by varying the effective layer separation. Using temperature-dependent Coulomb drag and counter-flow current measurements, we demonstrate the capability to tune the magneto-exciton condensate through the entire weak-coupling to strong-coupling phase diagram. Our results establish magneto-exciton condensates in graphene as a model platform to study the crossover between two Bosonic quantum condensate phases in a solid state system.

Highly confined In-plane Exciton-Polaritons in monolayer semiconductors

Abstract: I E thanks Dr Fabien Vialla. J H and D R acknowledge the funding support by the NSF MRSEC program through Columbia in the Center for Precision Assembly of Superstratic and Superatomic Solids (DMR-1420634). H G and B F acknowledge support from ERC advanced grant COMPLEXPLAS. F H L K acknowledges financial support from the Spanish Ministry of Economy and Competitiveness, through the "Severo Ochoa" Programme for Centres of Excellence in R&D (SEV-2015-0522), support by Fundacio Cellex Barcelona, Generalitat de Catalunya through the CERCA program, and the Mineco grants Plan Nacional (FIS2016-81044-P) and the Agency for Management of University and Research Grants (AGAUR) 2017 SGR 1656. Furthermore, the research leading to these results has received funding from the European Union Seventh Framework Programme under grant agreement no.785219 (Core2) and no. 881603 (Core3) Graphene Flagship. This work was supported by the ERC TOPONANOP under grant agreement no. 726001.

Electrically focus-tuneable ultrathin lens for high-resolution square subpixels.

Abstract: Owing to the tremendous demands for high-resolution pixel-scale thin lenses in displays, we developed a graphene-based ultrathin square subpixel lens (USSL) capable of electrically tuneable focusing (ETF) with a performance competitive with that of a typical mechanical refractive lens. The fringe field due to a voltage bias in the graphene proves that our ETF-USSL can focus light onto a single point regardless of the wavelength of the visible light—by controlling the carriers at the Dirac point using radially patterned graphene layers, the focal length of the planar structure can be adjusted without changing the curvature or position of the lens. A high focusing efficiency of over 60% at a visible wavelength of 405 nm was achieved with a lens thickness of <13 nm, and a change of 19.42% in the focal length with a 9% increase in transmission was exhibited under a driving voltage. This design is first presented as an ETF-USSL that can be controlled in pixel units of flat panel displays for visible light. It can be easily applied as an add-on to high resolution, slim displays and provides a new direction for the application of multifunctional autostereoscopic displays. Graphene-based ultrathin lenses with an electrically tuneable focal length could prove useful for providing displays with autostereoscopic 3D functionality, multiview or privacy protection. Developed by scientists in South Korea, the UK and the US, the lenses are just 13 nm thick and are based on a Fresnel Zone Plate (FZP) design made from a series of concentric rings of graphene on a glass substrate. Consisting of up to 5 layers of graphene that is patterned by focused ion-beam milling, the lenses offer a 60% transmission in the visible region and a focal length of 200–300 µm that can be tuned within ~20% range by applying a DC bias voltage. The applied voltage changes the charge carrier density in the graphene, modifying the topology of the FZP and thus its focusing behaviour.

Creation of moir\'e bands in a monolayer semiconductor by spatially periodic dielectric screening

Abstract: Moire superlattices of two-dimensional van der Waals materials have emerged as a powerful platform for designing electronic band structures and discovering emergent physical phenomena. A key concept involves the creation of long-wavelength periodic potential and moire bands in a crystal through interlayer hybridization when two materials are overlaid. Here we demonstrate a new approach based on spatially periodic dielectric screening to create moire bands in a monolayer semiconductor. It relies on reduced dielectric screening of the Coulomb interactions in monolayer semiconductors and their environmental dielectric-dependent electronic band structure. We observe optical transitions between moire bands in monolayer WSe$_{2}$ when it is placed close to small angle-misaligned graphene on hexagonal boron nitride. The moire bands are a result of long-range Coulomb interactions, strongly gate-tunable, and can have versatile superlattice symmetries independent of the crystal lattice of the host material. Our result also demonstrates that monolayer semiconductors are sensitive local dielectric sensors.

Exciton Dipole Orientation of Strain-Induced Quantum Emitters in WSe2.

Abstract: Transition metal dichalcogenides are promising semiconductors to enable advances in photonics and electronics and have also been considered as a host for quantum emitters. Particularly, recent adva...

High performance integrated graphene electro-optic modulator at cryogenic temperature

Abstract: High performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications. Existing integrated modulators, however, suffer from reduced modulation efficiency or bandwidth at low temperatures because they rely on tuning mechanisms that degrade with decreasing temperature. Graphene modulators are a promising alternative, since graphene's intrinsic carrier mobility increases at low temperature. Here we demonstrate an integrated graphene-based electro-optic modulator whose 14.7 GHz bandwidth at 4.9 K exceeds the room-temperature bandwidth of 12.6 GHz. The bandwidth of the modulator is limited only by high contact resistance, and its intrinsic RC-limited bandwidth is 200 GHz at 4.9 K.

High-performance integrated graphene electro-optic modulator at cryogenic temperature

Abstract: High performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications. Existing integrated modulators, however, suffer from reduced modulation efficiency or bandwidth at low temperatures because they rely on tuning mechanisms that degrade with decreasing temperature. Graphene modulators are a promising alternative, since graphene's intrinsic carrier mobility increases at low temperature. Here we demonstrate an integrated graphene-based electro-optic modulator whose 14.7 GHz bandwidth at 4.9 K exceeds the room-temperature bandwidth of 12.6 GHz. The bandwidth of the modulator is limited only by high contact resistance, and its intrinsic RC-limited bandwidth is 200 GHz at 4.9 K.

LIM-Nebulette Reinforces Podocyte Structural Integrity by Linking Actin and Vimentin Filaments.

Abstract: Background Maintenance of the intricate interdigitating morphology of podocytes is crucial for glomerular filtration. One of the key aspects of specialized podocyte morphology is the segregation and organization of distinct cytoskeletal filaments into different subcellular components, for which the exact mechanisms remain poorly understood. Methods Cells from rats, mice, and humans were used to describe the cytoskeletal configuration underlying podocyte structure. Screening the time-dependent proteomic changes in the rat puromycin aminonucleoside-induced nephropathy model correlated the actin-binding protein LIM-nebulette strongly with glomerular function. Single-cell RNA sequencing and immunogold labeling were used to determine Nebl expression specificity in podocytes. Automated high-content imaging, super-resolution microscopy, atomic force microscopy (AFM), live-cell imaging of calcium, and measurement of motility and adhesion dynamics characterized the physiologic role of LIM-nebulette in podocytes. Results Nebl knockout mice have increased susceptibility to adriamycin-induced nephropathy and display morphologic, cytoskeletal, and focal adhesion abnormalities with altered calcium dynamics, motility, and Rho GTPase activity. LIM-nebulette expression is decreased in diabetic nephropathy and FSGS patients at both the transcript and protein level. In mice, rats, and humans, LIM-nebulette expression is localized to primary, secondary, and tertiary processes of podocytes, where it colocalizes with focal adhesions as well as with vimentin fibers. LIM-nebulette shRNA knockdown in immortalized human podocytes leads to dysregulation of vimentin filament organization and reduced cellular elasticity as measured by AFM indentation. Conclusions LIM-nebulette is a multifunctional cytoskeletal protein that is critical in the maintenance of podocyte structural integrity through active reorganization of focal adhesions, the actin cytoskeleton, and intermediate filaments.

Cell shape regulates subcellular organelle location to control early Ca2+ signal dynamics in vascular smooth muscle cells.

Abstract: The shape of the cell is connected to its function; however, we do not fully understand underlying mechanisms by which global shape regulates a cell's functional capabilities. Using theory, experiments and simulation, we investigated how physiologically relevant cell shape changes affect subcellular organization, and consequently intracellular signaling, to control information flow needed for phenotypic function. Vascular smooth muscle cells going from a proliferative and motile circular shape to a contractile fusiform shape show changes in the location of the sarcoplasmic reticulum, inter-organelle distances, and differential distribution of receptors in the plasma membrane. These factors together lead to the modulation of signals transduced by the M3 muscarinic receptor/Gq/PLCβ pathway at the plasma membrane, amplifying Ca2+ dynamics in the cytoplasm, and the nucleus resulting in phenotypic changes, as determined by increased activity of myosin light chain kinase in the cytoplasm and enhanced nuclear localization of the transcription factor NFAT. Taken together, our observations show a systems level phenomenon whereby global cell shape affects subcellular organization to modulate signaling that enables phenotypic changes.