J
Jong-Ho Lee
Researcher at Seoul National University
Publications - 1054
Citations - 14204
Jong-Ho Lee is an academic researcher from Seoul National University. The author has contributed to research in topics: Field-effect transistor & Threshold voltage. The author has an hindex of 45, co-authored 928 publications receiving 11335 citations. Previous affiliations of Jong-Ho Lee include Massachusetts Institute of Technology & Kyungpook National University.
Papers
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Journal ArticleDOI
Characterization of phenotypes and predominant skeletodental patterns in pre-adolescent patients with Pierre-Robin sequence.
Il Hyung Yang,Jee Hyeok Chung,Hyeok Joon Lee,Il Sik Cho,Jin-Young Choi,Jong-Ho Lee,Sukwha Kim,Seung Hak Baek +7 more
TL;DR: In this paper, the authors investigated the phenotypes and predominant skeletodental pattern in pre-adolescent patients with Pierre-Robin sequence (PRS) and found that mandibular incisors were the most common missing teeth in 34.6% of the patients.
Journal ArticleDOI
Highly conductive and low-work-function polymer electrodes for solution-processed n-type oxide thin-film transistors
Gunel Shukret gizi Huseynova,Amos Amoako Boampong,Kyeong Min Yu,Ye-Seul Lee,Jong-Ho Lee,Min-Hoi Kim,Jae-Hyun Lee +6 more
TL;DR: In this paper , an n-doped poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) polymer and its application in n-type oxide thin-film transistors (OxTFTs) as a source and drain electrode material was presented.
Proceedings ArticleDOI
N + shallow junction formation using plasma doping and rapid thermal annealing
Seong Ho Kong,Ho Jung,Jeong Eun Kim,Seung Woo Do,Jae Geun Oh,Sun Hwan Hwang,Jin Gu Lee,Ja Choon Ku,Jong-Ho Lee,Yong Hyun Lee +9 more
TL;DR: In this article, n-type shallow junctions are formed with plasma doping technique, and examined by secondary ion mass spectrometer (SIMS), double crystal X-ray diffraction (DXRD) and 4-point probe analysis methods.
Journal ArticleDOI
Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory
Wandong Kim,Daewoong Kwon,Jung Hwan Ji,Junghoon Lee,Jong-Ho Lee,Hyungcheol Shin,Byung-Gook Park +6 more
TL;DR: In this article, the authors investigate the threshold voltage disturbance caused by programmed adjacent cells in virtual source/drain (VSD) NAND flash memory device and show that the disturbance increases as the cell gate length and VSD length decreases.
Journal ArticleDOI
Implant Fixture Installation in the Posterior Maxilla Using a Tooth-supported Surgical Template Based on Computer Assisted Treatment Planning
TL;DR: Two patients with partial edentulous maxilla were scheduled to undergo installation of implant fixtures using a tooth-supported surgical template based on computer assisted treatment planning and each implant was found to be fine with no other minor complications.