Jong-Ho Lee

TL;DR: In this article, the hot-carrier effects in n-channel bulk FinFETs were investigated for the first time, and the hotcarrier degradation was checked by changing the fin body width, and increased with decreasing the width.

TL;DR: In this article, the low frequency noise (LFN) characteristics of the resistor-type and the Si metal oxide semiconductor Field Effect Transistor (FET)-type gas sensors fabricated on the same wafer were systemically examined.

TL;DR: In this paper, a dermal substitute with amnion instead of silicone membrane has been proposed, which has several advantages, such as better biocompatibility, anti-inflammatory activity and promoting activity of wound healing and commercial utilization as basement membrane.

TL;DR: In this article, the authors provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique, where the metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, exhausting the metal source gases remaining in a reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor.

TL;DR: In this paper, the authors investigated the low-frequency noise properties of the bipolar switching resistance random access memories (RRAMs) for the first time with amorphous TiOx-based RRAM devices.