J
Jong-Ho Lee
Researcher at Seoul National University
Publications - 1054
Citations - 14204
Jong-Ho Lee is an academic researcher from Seoul National University. The author has contributed to research in topics: Field-effect transistor & Threshold voltage. The author has an hindex of 45, co-authored 928 publications receiving 11335 citations. Previous affiliations of Jong-Ho Lee include Massachusetts Institute of Technology & Kyungpook National University.
Papers
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3-D Stacked Synapse Array Based on Charge-Trap Flash Memory for Implementation of Deep Neural Networks
Yu Jeong Park,Hui Tae Kwon,Boram Kim,Won Joo Lee,Daehoon Wee,Hyun-Seok Choi,Byung-Gook Park,Jong-Ho Lee,Yoon Kim +8 more
TL;DR: A synaptic device based on charge-trap flash memory that has good CMOS compatibility and superior reliability characteristics compared with other synaptic devices and a 3-D stacked synapse array that could be a novel solution for neuromorphic systems for implementing deep neural networks are proposed.
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Effect of Temperature and Humidity on $\hbox{NO}_{2}$ and $\hbox{NH}_{3}$ Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD
TL;DR: In this article, the authors investigated the effect of temperature (T) and relative humidity on the gas sensitivity of bottom-gate graphene FETs prepared by the inductively coupled plasma chemical vapor deposition method, and the conductivity change of graphene exposed to nitrogen oxide (NO2) and ammonia (NH3) was increased with increasing temperature and humidity.
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Gas sensing characteristics of the FET-type gas sensor having inkjet-printed WS2 sensing layer
Yujeong Jeong,Jongmin Shin,Yoonki Hong,Meile Wu,Seongbin Hong,Ki Chang Kwon,Seokhoon Choi,Tae Hyung Lee,Ho Won Jang,Jong-Ho Lee +9 more
TL;DR: In this paper, the authors investigated the gas sensing characteristics of the MOSFET-type sensor having an inkjet-printed WS2 sensing layer and found that the WS2 sensor has a high selectivity for NO2 gas among the four target gases.
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Effects of O3 and H2O as oxygen sources on the atomic layer deposition of HfO2 gate dielectrics at different deposition temperatures
TL;DR: In this paper, the growth behavior, physical and electrical properties, and microstructure of the atomic layer deposited (ALD) HfO2 gate dielectrics were examined with two types of oxygen sources: O3 and H2O for the given Hf-precursor of Hf[N(CH3)(C2H5)]4.
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Low frequency noise characteristics in multilayer WSe2 field effect transistor
In-Tak Cho,Jong-In Kim,Yoonki Hong,Jeongkyun Roh,Hyeonwoo Shin,Geun Woo Baek,Changhee Lee,Byung Hee Hong,Sung Hun Jin,Jong-Ho Lee +9 more
TL;DR: In this article, the low-frequency noise properties of multilayer WSe2 field effect transistors (FETs) in subthreshold, linear, and saturation regime were investigated.