J
Jong-Ho Lee
Researcher at Seoul National University
Publications - 1054
Citations - 14204
Jong-Ho Lee is an academic researcher from Seoul National University. The author has contributed to research in topics: Field-effect transistor & Threshold voltage. The author has an hindex of 45, co-authored 928 publications receiving 11335 citations. Previous affiliations of Jong-Ho Lee include Massachusetts Institute of Technology & Kyungpook National University.
Papers
More filters
Posted Content
B1+ Homogenization in 7T MRI Using Mode-shaping with High Permittivity Materials
TL;DR: In this article, the authors proposed a phantom-conformal high permittivity material (HPM) potential-well in combination with a low-index potential barrier (air) to achieve the homogeneity of B1+ in the region of interest (ROI).
Journal ArticleDOI
Evaluation of HPV-related oral cancer using DNA microarray technology according to the 8th edition of the AJCC staging system.
TL;DR: A combination of at least two HPV testing methods, in particular the HPV DNA microarray method, is recommended, and it is hoped the recommendations will be updated in a future edition of the AJCC TNM staging system.
Journal ArticleDOI
Hardware-Based Spiking Neural Networks Using Capacitor-Less Positive Feedback Neuron Devices
TL;DR: Huang et al. as discussed by the authors designed a hardware-based spiking neural networks (SNNs) using capacitorless positive feedback (PF) neuron devices, which can simultaneously process the excitatory and inhibitory signals.
Journal ArticleDOI
Inferior alveolar nerve cutting; legal liability versus desired patient outcomes.
Soung Min Kim,Jong-Ho Lee +1 more
TL;DR: Choi et al. as discussed by the authors analyzed representative IAN cutting cases that occurred during mandibular contouring esthetic surgery and evaluated a questionnaire on the standard of care for the desired patient outcomes and the specialized surgeon's position with respect to legal liability.
Journal ArticleDOI
Threshold Voltage Modeling of Fully Depleted Nanoscale Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Doped Channel by Considering Drain Bias
TL;DR: In this article, the threshold voltage was modeled in a simple closed form by considering drain bias (VDS) for fully depleted (FD) symmetric double-gate (DG) n-channel MOSFETs.