Jong-Ho Lee

TL;DR: The Mg-based resorbable screw system is a promising alternative to the IN-based system and its biomechanical stability is compared with those of titanium (Ti)-based and polymer (IN)-based systems.

TL;DR: In this article, the effect of ozone pre-treatment on bias temperature instability (BTI) and electrical properties of high-k gate dielectrics was investigated, and it was shown that O/sub 3/pre-treatment effectively suppresses the incorporation of impurities (such as nitrogen (N), hydrogen (H), and water related species), resulting in the improvement of NBTI characteristics.

TL;DR: In this article, trap-related effects in recessed-gate normally-off AlGaN/GaN-based MOSHEMT with SiO 2 gate dielectric were characterized.

TL;DR: In this paper, the latent damage for transistors at the package level has been performed with various kinds of ESD stress modes and the impact of latent damage on circuit performance degradation was also evaluated using a 64 Mb DRAM chip as a DUT.

TL;DR: In this article, high dielectric layers formed from layers of hafnium oxide, zirconium oxide or aluminum oxide, yttrium oxide, and other metal oxides and silicates disposed on silicon substrates or ozone oxide layers over silicon substrate were treated by oxidation, annealing, or a combination of oxidation and anneal to form high dieelastic layers having superior mobility and interfacial characteristics.