J
Jong-Ho Lee
Researcher at Seoul National University
Publications - 1054
Citations - 14204
Jong-Ho Lee is an academic researcher from Seoul National University. The author has contributed to research in topics: Field-effect transistor & Threshold voltage. The author has an hindex of 45, co-authored 928 publications receiving 11335 citations. Previous affiliations of Jong-Ho Lee include Massachusetts Institute of Technology & Kyungpook National University.
Papers
More filters
Proceedings ArticleDOI
Mass production worthy HfO/sub 2/-Al/sub 2/O/sub 3/ laminate capacitor technology using Hf liquid precursor for sub-100 nm DRAMs
Jung-Hyoung Lee,Jong Pyo Kim,Jong-Ho Lee,Yunseok Kim,H. T. Jung,Nae-In Lee,Ho-Kyu Kang,Kwang-Pyuk Suh,Mun-Mo Jeong,Kyu-Taek Hyun,Hionsuck Baik,Young Su Chung,Xinye Liu,Sasangan Ramanathan,Tom Seidel,J. Winkler,Ana R. Londergan,H. Y. Kim,Jung Min Ha,N. K Lee +19 more
TL;DR: In this article, the first time, a MIS capacitor with ALD (Atomic Layer Deposition) grown HfO/sub 2/Al/sub 4/O/Sub 3/ laminate film using Hf liquid precursor (Hf(NEtMe)/sub 4/) was successfully demonstrated.
Journal ArticleDOI
Suppression of Read Disturb Fail Caused by Boosting Hot Carrier Injection Effect for 3-D Stack NAND Flash Memories
TL;DR: A new bias pulse method was proposed to suppress read disturbance in unselected strings of 3-D stack NAND flash memories by suppressing effectively a large cell Vth shift generated by boosting hot carrier injection.
Journal ArticleDOI
A Split-Gate Positive Feedback Device With an Integrate-and-Fire Capability for a High-Density Low-Power Neuron Circuit.
Kyu-Bong Choi,Sung Yun Woo,Won-Mook Kang,Soochang Lee,Chul-Heung Kim,Jong-Ho Bae,Suhwan Lim,Jong-Ho Lee +7 more
TL;DR: A split-gate floating-body positive feedback device with a charge trapping capability is proposed as a new neuron device that imitates the integrate-and-fire function of biological neurons without a large membrane capacitor.
Journal ArticleDOI
Investigation of Gate Etch Damage at Metal/High- $k$ Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current
Heung-Jae Cho,Younghwan Son,Byoungchan Oh,Seunghyun Jang,Jong-Ho Lee,Byung-Gook Park,Hyungcheol Shin +6 more
TL;DR: In this article, the plasma damage on a high-k/SiO2 dielectric at a gate edge during a dry etch process was investigated, and the damage was observed to generate slow oxide traps, causing a random telegraph noise (RTN) in a gate-edge direct tunneling current.