J
Jong-Ho Lee
Researcher at Seoul National University
Publications - 1054
Citations - 14204
Jong-Ho Lee is an academic researcher from Seoul National University. The author has contributed to research in topics: Field-effect transistor & Threshold voltage. The author has an hindex of 45, co-authored 928 publications receiving 11335 citations. Previous affiliations of Jong-Ho Lee include Massachusetts Institute of Technology & Kyungpook National University.
Papers
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Effects of Postdeposition Annealing Ambience on NO2 Gas Sensing Performance in Si-Based FET-Type Gas Sensor
TL;DR: In this article , the effects of postdeposition annealing (PDA) ambience on the nitrogen dioxide (NO2) gas sensing performance in the Si-based field effect transistor (FET)-type gas sensor having an indium-gallium-zinc oxide (IGZO) as a sensing material.
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Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes
TL;DR: In this article, the 3-terminal gated Schottky diode (GSD) was investigated and the LFN characteristics in the low-frequency noise region were shown to be strongly affected by the temperature.
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A new sensing mechanism of Si FET-based gas sensor using pre-bias
Yoonki Hong,Meile Wu,Jong-Ho Bae,Seongbin Hong,Yujeong Jeong,Dongkyu Jang,Jun Shik Kim,Cheol Seong Hwang,Byung-Gook Park,Jong-Ho Lee +9 more
TL;DR: In this article, a new capacitive-type FET (CFET) gas sensor is proposed and fabricated by using Si FET technology and only five photomasks are used to prepare the CFET sensor and a ZnO thin film prepared by atomic layer deposition (ALD) is adopted as a sensing material.
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Ferroelectric Transistors for Memory and Neuromorphic Device Applications
Ik-Jyae Kim,Jong-Ho Lee +1 more
TL;DR: Ferroelectric materials have been intensively investigated for high-performance nonvolatile memory devices in the past decades, owing to their non-volatile polarization characteristics as mentioned in this paper , and they have attracted immense attention in the development of advanced semiconductor devices.
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Physical Unclonable Functions Using Ferroelectric Tunnel Junctions
TL;DR: In this paper, the authors proposed physical unclonable function (PUF) operations using ferroelectric tunnel junctions (FTJ) and verify the effects of their dimension scaling on the PUF.