J
Jong-Ho Lee
Researcher at Seoul National University
Publications - 1054
Citations - 14204
Jong-Ho Lee is an academic researcher from Seoul National University. The author has contributed to research in topics: Field-effect transistor & Threshold voltage. The author has an hindex of 45, co-authored 928 publications receiving 11335 citations. Previous affiliations of Jong-Ho Lee include Massachusetts Institute of Technology & Kyungpook National University.
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Journal ArticleDOI
Decompression effects on bone healing in rat mandible osteomyelitis.
Buyanbileg Sodnom-Ish,Mi Young Eo,Ji Hye Oh,Mi Hyun Seo,Hoon Joo Yang,Jong-Ho Lee,Soung Min Kim +6 more
TL;DR: In this article, the authors analyzed the effectiveness of decompression in an OM jaw model and found that decompression drains induced advanced bone healing compared to that of curettage alone.
Journal ArticleDOI
A Gate-Induced Drain-Leakage Current Model for Fully Depleted Double-Gate MOSFETs
Xiaoshi Jin,Xi Liu,Jong-Ho Lee +2 more
TL;DR: In this paper, a gate-induced drain-leakage current model based on tunneling theory and analytical solution of a 2-D Poisson equation was developed to avoid the invalidation of 1D models for fully depleted double-gate MOSFETs.
Journal ArticleDOI
Clinical, statistical and chemical study of sialolithiasis
TL;DR: There was no statistical correlation between size, location, and symptoms of sialolithiasis among patients who visited Seoul National University Dental Hospital during 2004-2009.
Proceedings ArticleDOI
Accurate identification of gas type and concentration using DNN reflecting the sensing properties of MOSFET-type gas sensor
Gyuweon Jung,Hyeongsu Kim,Yujeong Jeong,Yoonki Hong,Meile Wu,Seongbin Hong,Wonjun Shin,Dongkyu Jang,Jong-Ho Lee +8 more
TL;DR: The principal component analysis (PCA) and deep neural network (DNN) are used to classify the gas types and to identify the concentration of gases and the DNN regression model has the ability to precisely identify gas concentration and gas type in changing temperature conditions.
Journal ArticleDOI
Analysis on Trapping Kinetics of Stress-Induced Trapped Holes in Gate Dielectric of Amorphous HfInZnO TFT
TL;DR: In this article, a comprehensive study was done regarding stability under simultaneous stress of light and negative gate dc bias in amorphous hafnium-indium-zincoxide (HIZO) thin-film transistors.