J
Jong-Ho Lee
Researcher at Seoul National University
Publications - 1054
Citations - 14204
Jong-Ho Lee is an academic researcher from Seoul National University. The author has contributed to research in topics: Field-effect transistor & Threshold voltage. The author has an hindex of 45, co-authored 928 publications receiving 11335 citations. Previous affiliations of Jong-Ho Lee include Massachusetts Institute of Technology & Kyungpook National University.
Papers
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Highly Linear Analog Spike Processing Block Integrated With an AND-Type Flash Array and CMOS Neuron Circuits
Kyu Ho Lee,Dongseok Kwon,Sung Yun Woo,Jong Hyun Ko,Soo Young Choi,Byung Gook Park,Jong-Ho Lee +6 more
TL;DR: Under the given operating conditions, the fabricated SPB consistently exhibits a highly linear relationship between the current sum and the output spike frequency, enabling the SNNs to precisely mimic the layer of artificial neural networks (ANNs) with rectified linear unit (ReLU) activation function.
Journal ArticleDOI
Highly Conductive, Flexible, and Robust Silver Nanowire-Embedded Carboxymethyl Cellulose/Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) Composite Films for Wearable Heaters and On-Skin Sensors
Joo Won Han,Ajeng Prameswati,Siti Aisyah Nurmaulia Entifar,Jung Kim,Anky Fitrian Wibowo,JiHyun Park,Jong-Ho Lee,Soyon Kim,Dong Chan Lim,Myoung-Woon Moon,Min-Seok Kim,Yong Kim +11 more
TL;DR: In this paper , the conductivity of carboxymethyl cellulose (CMC)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) composite films were investigated for application in wearable heaters and on-skin sensors.
Journal ArticleDOI
Thermal stability of atomic layer deposited Ru layer on Si and TaN/Si for barrier application of Cu interconnection.
TL;DR: Based on the experimental results, the combination of ALD Ru incorporated with TaN layer would be a promising barrier structure in Cu metallization.
Proceedings ArticleDOI
Characterization of Low Frequency Noise in Floating Gate NAND Flash Memory
TL;DR: The LFN was investigated with program/erase (P/E) cycling of a cell or all cells in a string, and shown several tens mV of maximum threshold voltage fluctuation after ~100 k cycling at 70 nm node.