J
Jong-Ho Lee
Researcher at Seoul National University
Publications - 1054
Citations - 14204
Jong-Ho Lee is an academic researcher from Seoul National University. The author has contributed to research in topics: Field-effect transistor & Threshold voltage. The author has an hindex of 45, co-authored 928 publications receiving 11335 citations. Previous affiliations of Jong-Ho Lee include Massachusetts Institute of Technology & Kyungpook National University.
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Hyaluronic acid/poly(lactic-co-glycolic acid) core/shell fiber meshes loaded with epigallocatechin-3-O-gallate as skin tissue engineering scaffolds.
Eunji Lee,Jong-Ho Lee,Linhua Jin,Oh Seong Jin,Yongcheol Shin,Jin Oh Sang,Jaebeom Lee,Suong-Hyu Hyon,Dong-Wook Han +8 more
TL;DR: The results suggest that HA/PLGA-E core/shell fiber meshes can be potentially used as scaffolds supporting skin regeneration and EGCG loading did not adversely affect the tensile strength and elastic modulus of HA/ PLGA meshes, while increased their hydrophilicity and surface energy.
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Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device
Sungjun Kim,Yao-Feng Chang,Min-Hwi Kim,Suhyun Bang,Tae-Hyeon Kim,Ying-Chen Chen,Jong-Ho Lee,Byung-Gook Park +7 more
TL;DR: Nonlinear behavior in the LRS, whose origin can be attributed to the P-F conduction and F-N tunneling driven by abundant traps in the silicon-rich SiNx layer, would be beneficial for next-generation nonvolatile memory applications by using a conventional passive SiNX layer as an active dielectric.
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Schwann-like cells differentiated from human dental pulp stem cells combined with a pulsed electromagnetic field can improve peripheral nerve regeneration.
Wei-Hong Hei,Soochan Kim,Joo-Cheol Park,Young-Kwon Seo,Soung Min Kim,Jeong Won Jahng,Jong-Ho Lee +6 more
TL;DR: Schwan‐like cells + PEMF showed highest regeneration ability; PEMF has additive effect on hDPSCs, Schwann‐like cell in vitro and nerve regeneration ability after transplantation in vivo.
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DC and AC characteristics of sub-50-nm MOSFETs with source/drain-to-gate nonoverlapped structure
TL;DR: In this article, a nonoverlapped source/drain (S/D) to gate region was proposed to overcome the challenges in sub-50-nm CMOS devices, where an oxide spacer was used to reduce parasitic gate overlap capacitance.
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The Optimal Design of Junctionless Transistors with Double-Gate Structure for reducing the Effect of Band-to-Band Tunneling
TL;DR: In this article, the authors proposed an effective method to decline the influence of band-to-band tunneling with the example of ntype double gate (DG) JL metal-oxide-semiconductor field effect transistors (MOSFETs).