Jong-Ho Lee

TL;DR: In this article, a polycrystalline silicon (poly-Si) capacitorless one-transistor dynamic random access memory (1T DRAM) has been successfully fabricated and characterized, and the floating-body for storing charges was schemed in the silicon-on-insulator (SOI)-like environment which was simply realized by deposited oxide and poly-Si layers for the high cost-effectiveness.

TL;DR: In this paper, the authors attempted to grow a semi-insulating silicon carbide (SiC) epitaxial layer by in situ iron doping, which was performed by metal-organic chemical vapor deposition using the organo-silicon precursor bis(trimethylsilylmethane) (C7H20Si2) and the metalorganic precursor t-butylferrocene (C14H17Fe).

TL;DR: In this article, the effects of shallow trench isolation (STI) on silicon-on-insulator (SOI) devices are investigated for various device sizes with three different gate shapes.

TL;DR: In this article, the position dependence of threshold voltage change in floating-gate NAND Flash cell strings due to random telegraph noise was characterized and the cumulative distribution of ΔVth's measured from 100 cell devices at word line 31 (WL31) is broader than that at WL0 due to smaller transconductance (Gm).

TL;DR: The results suggest that SFA might be an effective alternative to CTM if the cause of “high relapse” including amounts of mandibular setback and clockwise rotation of the proximal segment of the mandible during surgery can be controlled.