J
Jong-Ho Lee
Researcher at Seoul National University
Publications - 1054
Citations - 14204
Jong-Ho Lee is an academic researcher from Seoul National University. The author has contributed to research in topics: Field-effect transistor & Threshold voltage. The author has an hindex of 45, co-authored 928 publications receiving 11335 citations. Previous affiliations of Jong-Ho Lee include Massachusetts Institute of Technology & Kyungpook National University.
Papers
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Journal ArticleDOI
Isotropic/anisotropic selective epitaxial growth of Si on local oxidation of silicon (LOCOS) patterned Si (100) substrate by cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD)
TL;DR: In this article, the isotropic/anisotropic growth behavior of Si epitaxial layers was carefully analyzed and a new model was proposed, considering surface mass transport and the free energy change.
Proceedings ArticleDOI
Novel 3-D stacked NAND flash string without body cross-talk effect
TL;DR: Investigation of ID-VGS characteristic of proposed 3-D stacked NAND flash string with common gate structure and a shield layer found it to be very promising candidate for future high density NANDflash memory.
Proceedings ArticleDOI
Detection of Low Concentration NO 2 gas Using Si FET-type Gas Sensor with Localized Micro-heater for Low Power Consumption
Gyuweon Jung,Yoonki Hong,Seongbin Hong,Yujeong Jeong,Wonjun Shin,Jinwoo Park,Jung-Kyu Lee,Dongkyu Jang,Jong-Ho Lee +8 more
TL;DR: In this article, the sensing characteristics of nitrogen dioxide (NO 2 ) gas in Si FET-type gas sensor using localized micro-heater were investigated using a 12nm-thick indium oxide (In 2 O 3 ) deposited by a radio frequency magnetron sputtering method.
Journal ArticleDOI
A Novel Analysis of ${L}_{\text{gd}}$ Dependent-1/ ${f}$ Noise in In 0.08 Al 0.92 N/GaN
Jae Hwa Seo,Young Jun Yoon,Dong-Hyeok Son,Jeong-Gil Kim,Jong-Ho Lee,Jung-Hee Lee,Ki-Sik Im,In Man Kang +7 more
TL;DR: In this article, a dc and low-frequency noise (LFN) measurements of the In0.08Al0.92N/GaN fin-type high-electron mobility transistors (fin-HEMTs) with different gate-to-drain lengths ( ${L} _{\text {gd}}$ ) are fabricated and characterized by dc and LFN measurements.
Journal ArticleDOI
Growth behavior of iridium on Si substrates prepared by plasma enhanced atomic layer deposition.
TL;DR: Growth behavior of iridium (Ir) thin film on Si substrates prepared by plasma enhanced atomic layer deposition (PEALD) was systematically studied and revealed that IrOx was not formed due to relatively low partial pressure of oxygen.