J
Jong-Ho Lee
Researcher at Seoul National University
Publications - 1054
Citations - 14204
Jong-Ho Lee is an academic researcher from Seoul National University. The author has contributed to research in topics: Field-effect transistor & Threshold voltage. The author has an hindex of 45, co-authored 928 publications receiving 11335 citations. Previous affiliations of Jong-Ho Lee include Massachusetts Institute of Technology & Kyungpook National University.
Papers
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Journal ArticleDOI
Investigation on growth behavior of CNTs synthesized by atmospheric pressure plasma enhanced chemical vapor deposition system on Fe catalyzed substrate.
TL;DR: From experiments, it can observe that the height and growth rate of CNTs is strong function of plasma power.
Journal ArticleDOI
Development of a predictive model for soil temperature and its application to species distribution modeling of ant species in South Korea
TL;DR: In this article, the authors developed a predictive model for soil temperature and evaluated the potential distribution of a few ant species in South Korea using linear regression as a function of the monthly maximum and minimum air temperatures.
Proceedings ArticleDOI
A novel method to characterize the effect from the diffusion of Cu in through silicon via (TSV)
Kyung-Do Kim,Kwi-Wook Kim,Min-Soo Yoo,Yong-Taik Kim,Sung-Kye Park,Sung-Joo Hong,Chan-Hyeong Park,Byung-Gook Park,Jong-Ho Lee +8 more
TL;DR: In this article, a new test pattern was proposed and its effectiveness was verified experimentally, which has a shallow n+/n well region formed in an n-well region butted to the TSV dielectric surrounding a TSV.
Journal ArticleDOI
Vertically-Stacked Si 0.2 Ge 0.8 Nanosheet Tunnel FET With 70 mV/Dec Average Subthreshold Swing
Ryoongbin Lee,Junil Lee,Kitae Lee,So Youn Kim,Hyunho Ahn,Sihyun Kim,Hyun-Min Kim,Changha Kim,Jong-Ho Lee,Sangwan Kim,Byung-Gook Park +10 more
TL;DR: In this paper, a novel CMOS-compatible SiGe tunnel field effect transistor (TFET) with a high current drivability is demonstrated, which features a vertically-stacked SiGe nanosheet (NS) with high Ge content and gate-all-around(GAA) structure to improve carrier injection efficiency and gate controllability.