J
Jong-Ho Lee
Researcher at Seoul National University
Publications - 1054
Citations - 14204
Jong-Ho Lee is an academic researcher from Seoul National University. The author has contributed to research in topics: Field-effect transistor & Threshold voltage. The author has an hindex of 45, co-authored 928 publications receiving 11335 citations. Previous affiliations of Jong-Ho Lee include Massachusetts Institute of Technology & Kyungpook National University.
Papers
More filters
Patent
System for compensating for disturbance of motor for motor driven power steering
TL;DR: In this article, a system for compensating for disturbance of a motor for motor driven power steering compensates for the disturbance based on a closed loop based input value prediction model unit.
Journal ArticleDOI
Effect of charge storage engineering on the NO2 gas sensing properties of a WO3 FET-type gas sensor with a horizontal floating-gate.
Wonjun Shin,Seongbin Hong,Yujeong Jeong,Gyuweon Jung,Jinwoo Park,Donghee Kim,Chayoung Lee,Byung-Gook Park,Jong-Ho Lee +8 more
TL;DR: In this paper, the effects of charge storage engineering (CSE) on the NO2 gas sensing properties such as response, recovery, and sensitivity of a FET-type gas sensor with a horizontal floating-gate (FG) having tungsten trioxide (WO3) as a sensing layer.
Journal ArticleDOI
Low Frequency Noise Characteristics on Al/Nb2O5/p-type Schottky Diode Fabricated by Pulsed DC Magnetron Sputtering
TL;DR: In this article, the effect of O2 flow rate of deposition process on low frequency noise has also been investigated and analyzed and the experimental noise data have been successfully explained by the random walk model.
Proceedings ArticleDOI
Effect of displacement current on current-voltage characteristics in electrolyte-gated graphene FETs
Jun-Mo Park,Jong-Ho Lee +1 more
TL;DR: The counterclockwise hysteresis appearing in I-D-V-G curves with fast sweeping rate is caused by the displacement current, and thus limits the operating speed of electrolyte-gated GFETs.
Journal ArticleDOI
Band-to-Band Hot-hole Erase Characteristics of 2-Bit/cell NOR-type Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Cell with Spacer-type Storage Node on Recessed Channel Structure
TL;DR: In this article, a 2-bit/cell silicon-oxide-nitride-oxideoxide-silicon (SONOS) flash memory device was proposed and characterized for 50 nm NVM technology.