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Jong-Ho Lee

Researcher at Seoul National University

Publications -  1054
Citations -  14204

Jong-Ho Lee is an academic researcher from Seoul National University. The author has contributed to research in topics: Field-effect transistor & Threshold voltage. The author has an hindex of 45, co-authored 928 publications receiving 11335 citations. Previous affiliations of Jong-Ho Lee include Massachusetts Institute of Technology & Kyungpook National University.

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Journal ArticleDOI

Long-term treatment outcomes and prognostic features in adenoid cystic carcinoma of the head and neck

TL;DR: Recurrence and metastasis were the main cause of treatment failure of ACC in head and neck and T stage, age, primary tumor site, histologic type, cervical lymph node metastasis, and distant metastasiswere the independent prognostic factors ofACC inHead and neck.
Proceedings ArticleDOI

First demonstration of diode-type 3-D NAND flash memory string having super-steep switching slope

TL;DR: Super-steep switching is successfully demonstrated using positive feedback (PF) in fabricated diode-type 3-D NAND flash memory strings while keeping much better SS than that of the FET-type string even after program/erase (P/E) cycling.
Journal Article

Sciatic nerve regeneration using calcium phosphate coated conduit and brain-derived neurotrophic factor gene-transfected schwann cell in rat.

TL;DR: Peripheral nerve regeneration depends on neurotrophism of distal nerve stump, recovery potential of neuron, supporting cell like Schwann cell and neurotrophic factors such as BDNF, which can be made by gene therapy.
Journal ArticleDOI

Decrease in Work Function of Transparent Conducting ZnO Thin Films by Phosphorus Ion Implantation

TL;DR: The work-function of phosphorus ion-implanted ZnO thin films is observed to be lower and decreases with increasing ion doses, and those films exhibit the optical transmittance higher than 85% within the visible wavelength range (up to 800 nm).
Journal ArticleDOI

Effects of high-injection barrier (HIB) position on bipolar transistor characteristics

TL;DR: In this paper, the effect of the vertical position over the n/sup $/collector of the n-type layer formed by a high energy phosphorus implantation on the high current level characteristics of a n-p-n bipolar device was analyzed.