J
Jong-Ho Lee
Researcher at Seoul National University
Publications - 1054
Citations - 14204
Jong-Ho Lee is an academic researcher from Seoul National University. The author has contributed to research in topics: Field-effect transistor & Threshold voltage. The author has an hindex of 45, co-authored 928 publications receiving 11335 citations. Previous affiliations of Jong-Ho Lee include Massachusetts Institute of Technology & Kyungpook National University.
Papers
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Thermoreflectance microscopy analysis on self-heating effect of short-channel amorphous In-Ga-Zn-O thin film transistors
Jong-In Kim,Ki Soo Chang,Dong Uk Kim,In-Tak Cho,Chan-Yong Jeong,Daeun Lee,Hyuck-In Kwon,Sung Hun Jin,Jong-Ho Lee +8 more
TL;DR: In this article, the authors investigated the self-heating effect of short-channel amorphous In-Ga-Zn-O TFTs by using high-resolution thermoreflectance microscopy.
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A novel high performance junctionless FETs with saddle-gate
TL;DR: In this paper, a saddle-gate junctionless field effect transistors (JL FETs) with a saddle gate structure has been proposed, and the I---V characteristics has been extensively studied by TCAD device simulation.
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Increase of glucocorticoids is not required for the acquisition, but hinders the extinction, of lithium-induced conditioned taste aversion.
TL;DR: The results reveal that glucocorticoid is not a necessary component in the acquisition, but an important player in the extinction, of lithium-induced CTA, and suggest that a pulse increase of glucoc Corticoid may hinder the extinction memory formation of Lithium- induced CTA.
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Biomechanical evaluation of unilateral subcondylar fracture of the mandible on the varying materials: A finite element analysis.
Bryan Taekyung Jung,Won-Hyeon Kim,Won-Hyeon Kim,Byungho Park,Jong-Ho Lee,Bongju Kim,Jee-Ho Lee +6 more
TL;DR: The results of the present study imply the clinical potential of the HA-PLLA fixation material for open reduction of subcondylar fractures.
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Analysis on Reverse Drain-Induced Barrier Lowering and Negative Differential Resistance of Ferroelectric-Gate Field-Effect Transistor Memory
TL;DR: In this paper, the authors demonstrate novel analysis on electrical characteristics of ferroelectric gate field effect transistor (FeFET), especially reverse DIBL (RDIBL) and negative differential resistance (NDR) phenomena through measurements of fabricated FeFETs and technology computer-aided design (TCAD) simulations.