Nagoya Institute of Technology

About: Nagoya Institute of Technology is a education organization based out in Nagoya, Japan. It is known for research contribution in the topics: Thin film & Catalysis. The organization has 10766 authors who have published 19140 publications receiving 255696 citations. The organization is also known as: Nagoya Kōgyō Daigaku & Nitech.

Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice

Abstract: A semiconductor wafer having an epitaxial GaAs layer, including a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5° and 5° with respect to (100); and at least one intermediate layer epitaxially grown on the major surface of the monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between the Si substrate and the epitaxial GaAs layer which is epitaxially grown on a major surface of the top layer of the at least one intermediate layer. The at least one intermediate layer may comprise one or mor GaP/GaAsP, GaAsP/GaAs superlattice layers. the wafer may be used to produce a seimconductor light emitting element which has a plurality of crystalline gaAs layers including a light emitting layer epitaxially grown on the GaAs layer on the intermediate layer. The wafer may also be used to produce a compound semiconductor device such as amplifying and switching elements, light emitting and receiving elements and photovolataic elements. Methods for producing the semiconductor wafer, light emitting element and compound semiconductor devices are also disclosed.

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

Abstract: Crack-free AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on a 200 mm Si substrate by metal–organic chemical vapor deposition (MOCVD) is presented. As grown epitaxial layers show good surface uniformity throughout the wafer. The AlGaN/GaN HEMT with the gate length of 1.5 µm exhibits a high drain current density of 856 mA/mm and a transconductance of 153 mS/mm. The 3.8-µm-thick device demonstrates a high breakdown voltage of 1.1 kV and a low specific on-resistance of 2.3 mΩ cm2 for the gate–drain spacing of 20 µm. The figure of merit of our device is calculated as 5.3×108 V2 Ω-1 cm-2.

Origin of Negative Differential Resistance Observed on Bipolar Resistance Switching Device with Ti/Pr0.7Ca0.3MnO3/Pt Structure

Abstract: Bipolar resistance switching was investigated on sputtered Pr0.7Ca0.3MnO3 (PCMO) sandwiched by Pt- and Ti-electrodes. Based on electrical conductivity measurements and a combination of electron energy loss spectroscopy analysis and transmission electron microscopy observation, we found that the negative differential resistance observed in the forming process originates from the motion of oxygen ions at the Ti/PCMO interface. We propose that the observed resistance switching is caused by an oxidation/reduction reaction at the interface.