Nagoya Institute of Technology

About: Nagoya Institute of Technology is a education organization based out in Nagoya, Japan. It is known for research contribution in the topics: Thin film & Catalysis. The organization has 10766 authors who have published 19140 publications receiving 255696 citations. The organization is also known as: Nagoya Kōgyō Daigaku & Nitech.

Direct Enantioselective Three‐Component Kabachnik–Fields Reaction Catalyzed by Chiral Bis(imidazoline)‐Zinc(II) Catalysts

Abstract: A direct three-component reaction of aldehydes, amines and diaryl phosphites was catalyzed by a zinc(II) complex of 1,3-bis(imidazolin-2-ly)pyridine (pybim) giving the corresponding α-aminophosphonates in good yield with good enantioselectivity. The reaction was applied to a wide variety of aromatic aldehydes to give products with excellent yields (up to 99%) and enantiomeric excesses (up to 93% ee).

Modelling mechanical consequences of erosion

Abstract: The process of internal erosion of fine particles from a soil progressively narrows the grading of the soil. Development of a continuum model for the mechanical consequences of erosion has taken inspiration from two-dimensional discrete element analyses of assemblies of circular discs of various gradings. The process of erosion has been described in these analyses by progressively removing the finer particles while maintaining the sample under constant stresses. The removal of particles produces an increase in specific volume because the volume of solid decreases and the volume of void increases, but the looser structure compresses under the external stresses. Parallel continuum modelling takes an existing distortional hardening model, in which the critical state line plays a central role, and adds a volumetric deformation mechanism to describe the observed compression. The discrete element modelling analyses and other results remind us that the first-order effect of narrowing grading is the raising of th...

High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Abstract: Al0.26Ga0.74N∕AlN∕GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diam epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy. It was found that AlN/sapphire templates significantly enhanced the electron mobility of the two-dimensional electron gas (2DEG) confined at the GaN channel. This can be explained by the high-crystal-quality GaN channel realized by the use of epitaxial AlN/sapphire templates as substrates. The very high Hall mobilities of approximately 2100cm2∕Vs at room temperature and approximately 17000cm2∕Vs at 77K with a 2DEG density of approximately 1×1013∕cm2 were uniformly obtained for AlGaN∕AlN∕GaN heterostructures on 100-mm-diam epitaxial AlN/sapphire templates. The Hall mobility of AlGaN∕AlN∕GaN heterostructures on epitaxial AlN/sapphire templates reached a very high value of 25500cm2∕Vs at 15K.

Acoustic-to-Articulatory Inversion Mapping with Gaussian Mixture Model

Abstract: This paper describes the acoustic-to-articulatory inversion mapping using a Gaussian Mixture Model (GMM). Correspondence of an acoustic parameter and an articulatory parameter is modeled by the GMM trained using the parallel acousticarticulatory data. We measure the performance of the GMMbased mapping and investigate the effectiveness of using multiple acoustic frames as an input feature and using multiple mixtures. As a result, it is shown that although increasing the number of mixtures is useful for reducing the estimation error, it causes many discontinuities in the estimated articulatory trajectories. In order to address this problem, we apply maximum likelihood estimation (MLE) considering articulatory dynamic features to the GMM-based mapping. Experimental results demonstrate that the MLE using dynamic features can estimate more appropriate articulatory movements compared with the GMM-based mapping applied smoothing by lowpass filter.