Nagoya Institute of Technology

About: Nagoya Institute of Technology is a education organization based out in Nagoya, Japan. It is known for research contribution in the topics: Thin film & Catalysis. The organization has 10766 authors who have published 19140 publications receiving 255696 citations. The organization is also known as: Nagoya Kōgyō Daigaku & Nitech.

Highly Enantioselective Reactions of Configurationally Labile α-Thioorganolithiums Using Chiral Bis(oxazoline)s via Two Different Enantiodetermining Steps

Abstract: A cumene solution of α-stannyl benzyl phenyl sulfide was treated with n-BuLi and bis(oxazoline)-iPr at −78 °C and subsequently with benzophenone to give the product with 99% ee. We confirmed that the reaction of α-lithio benzyl phenyl sulfide proceeds through a dynamic kinetic resolution pathway. The enantioselective reactions of α-lithio benzyl 2-pyridyl sulfide gave the products with stereochemistry reverse to that obtained in the reaction of benzyl phenyl sulfide. We confirmed that this reaction proceeds through a dynamic thermodynamic resolution pathway in which the reaction with an electrophile proceeds faster than interconversion between the diastereomeric complexes.

MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers

Abstract: GaAs with a mirror-like surface is grown by MOCVD on an Si substrate using an AlP, AlGaP, GaP/GaAs0.5P0.5 super-lattice and GaAs0.5P0.5/GaAs superlattice as intermediate layers. The photoluminescence intensity is found to be about 56% of that of a GaAs substrate grown under the same conditions and is one order of magnitude higher than that grown on a Ge-coated Si substrate, in spite of the early stage of the experiment.