Analytical Modeling and Experimental Validation of Threshold Voltage in BSIM6 MOSFET Model
Harshit Agarwal,Chetan Gupta,Pragya Kushwaha,Chandan Yadav,Juan P. Duarte,Sourabh Khandelwal,Chenming Hu,Yogesh Singh Chauhan +7 more
TLDR
In this article, an analytical model of threshold voltage for bulk MOSFETs is developed, which is derived from the physical charge-based core of BSIM6 model, taking into account short channel effects, and is used in commercial SPICE simulators for operating point information.Abstract:
In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold voltage extraction techniques, and good agreement is obtained.read more
Citations
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Journal ArticleDOI
BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect
Harshit Agarwal,Chetan Gupta,Ravi Goel,Pragya Kushwaha,Yen-Kai Lin,Ming-Yen Kao,Juan Pablo Duarte,Huan-Lin Chang,Yogesh Singh Chauhan,Sayeef Salahuddin,Chenming Hu +10 more
TL;DR: In this article, a BSIM-based compact model for a high-voltage MOSFET is presented, which has been extended to include the overlap capacitance due to the drift region as well as quasi-saturation effect.
Journal ArticleDOI
Analytical Modeling of Flicker Noise in Halo Implanted MOSFETs
TL;DR: An improved analytical model for flicker noise in MOSFETs is presented in this paper, which captures the effect of high-trap density in the halo regions of the devices.
Journal ArticleDOI
Modeling of Subsurface Leakage Current in Low $V_{\mathrm {TH}}$ Short Channel MOSFET at Accumulation Bias
Yen-Kai Lin,Sourabh Khandelwal,Aditya Sankar Medury,Harshit Agarwal,Huan-Lin Chang,Yogesh Singh Chauhan,Chenming Hu +6 more
TL;DR: In this article, a phenomenological model for subsurface leakage current in MOSFETs biased in accumulation is presented, which takes drain-to-source voltage, gate-tosource voltage and gate length into account.
Journal ArticleDOI
Anomalous Transconductance in Long Channel Halo Implanted MOSFETs: Analysis and Modeling
TL;DR: An analytical model, based on the equivalent conductance of the halo device, is developed to understand the anomalous behavior of transconductance in halo implanted MOSFET for linear and saturation regions across both gate and body biases.
Journal ArticleDOI
Analysis and Modeling of Temperature and Bias Dependence of Current Mismatch in Halo-Implanted MOSFETs
TL;DR: In this paper, an analytical model that accurately captures anomalous matching characteristics of drain current in a halo-implanted MOSFET across bias, geometry, and temperature is presented.
References
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HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation
Mitiko Miura-Mattausch,Norio Sadachika,Dondee Navarro,G. Suzuki,Y. Takeda,Masataka Miyake,T. Warabino,Y. Mizukane,R. Inagaki,T. Ezaki,Hans Jurgen Mattausch,Tatsuya Ohguro,Takahiro Iizuka,M. Taguchi,S. Kumashiro,S. Miyamoto +15 more
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Yogesh Singh Chauhan,Sriramkumar Venugopalan,Maria-Anna Chalkiadaki,M. A. Karim,Harshit Agarwal,Sourabh Khandelwal,Navid Paydavosi,Juan Pablo Duarte,Christian Enz,Ali M. Niknejad,Chenming Hu +10 more
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Proceedings ArticleDOI
Modeling of pocket implanted MOSFETs for anomalous analog behavior
TL;DR: In this article, the first physical model of drain-induced threshold voltage shift and low output resistance to long channel devices is proposed and verified against data from a 018 /spl mu/m technology.
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A simple and unambiguous definition of threshold voltage and its implications in deep-submicron MOS device modeling
Xing Zhou,K.Y. Lim,D. Lim +2 more
TL;DR: A new definition of MOSFET threshold voltage is proposed, namely, the "critical-current at linear-threshold" method, which has a unique solution and is very simple to measure.
Proceedings ArticleDOI
Threshold voltage extraction methods for MOS transistors
TL;DR: In this article, the authors compared several largely applied threshold voltage extraction methods used both for long channel and short channel MOSFETs, using MATHCAD designed programs.