Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors
Deep Jariwala,Vinod K. Sangwan,Dattatray J. Late,James E. Johns,Vinayak P. Dravid,Tobin J. Marks,Lincoln J. Lauhon,Mark C. Hersam +7 more
TLDR
In this paper, the authors report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination.Abstract:
Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.read more
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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Andrea C. Ferrari,Francesco Bonaccorso,Francesco Bonaccorso,Vladimir I. Fal'ko,Konstantin S. Novoselov,Stephan Roche,Peter Bøggild,Stefano Borini,Frank H. L. Koppens,Vincenzo Palermo,Nicola M. Pugno,Nicola M. Pugno,Nicola M. Pugno,Jose A. Garrido,Roman Sordan,Alberto Bianco,Laura Ballerini,Maurizio Prato,Elefterios Lidorikis,Jani Kivioja,Claudio Marinelli,Tapani Ryhänen,Alberto F. Morpurgo,Jonathan N. Coleman,Valeria Nicolosi,Luigi Colombo,Albert Fert,Albert Fert,Mar García-Hernández,Adrian Bachtold,Grégory F. Schneider,Francisco Guinea,Cees Dekker,Matteo Barbone,Zhipei Sun,Costas Galiotis,Alexander N. Grigorenko,Gerasimos Konstantatos,Andras Kis,Mikhail I. Katsnelson,Lieven M. K. Vandersypen,A. Loiseau,Vittorio Morandi,Daniel Neumaier,Emanuele Treossi,Vittorio Pellegrini,Vittorio Pellegrini,Marco Polini,Alessandro Tredicucci,Gareth M. Williams,Byung Hee Hong,Jong Hyun Ahn,Jong Min Kim,Herbert Zirath,Bart J. van Wees,Herre S. J. van der Zant,Luigi Occhipinti,Andrea di Matteo,Ian A. Kinloch,Thomas Seyller,Etienne Quesnel,Xinliang Feng,K.B.K. Teo,Nalin Rupesinghe,Pertti Hakonen,Simon R. T. Neil,Quentin Tannock,Tomas Löfwander,Jari M. Kinaret +68 more
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High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
Kibum Kang,Saien Xie,Lujie Huang,Yimo Han,Pinshane Y. Huang,Kin Fai Mak,Cheol-Joo Kim,David A. Muller,Jiwoong Park +8 more
TL;DR: The preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide and tungsten disulPHide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films are reported, a step towards the realization of atomically thin integrated circuitry.
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Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.
Rajesh Kappera,Damien Voiry,Sibel Ebru Yalcin,Brittany Branch,Gautam Gupta,Aditya D. Mohite,Manish Chhowalla +6 more
TL;DR: It is demonstrated that the metallic 1T phase of MoS2 can be locally induced on semiconducting 2H phase nanosheets, thus decreasing contact resistances to 200-300 Ω μm at zero gate bias.
Journal ArticleDOI
Sensing behavior of atomically thin-layered MoS2 transistors
Dattatray J. Late,Yi Kai Huang,B. T. Liu,Jagaran Acharya,Jagaran Acharya,Sharmila N. Shirodkar,Jiajun Luo,Aiming Yan,Daniel Charles,Umesh V. Waghmare,Vinayak P. Dravid,C. N. R. Rao +11 more
TL;DR: The results show that, compared to the single-layer counterpart, transistors of few MoS2 layers exhibit excellent sensitivity, recovery, and ability to be manipulated by gate bias and green light, and ab initio DFT calculations show that the charge transfer is the reason for the decrease in resistance in the presence of applied field.
References
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Electronic processes in non-crystalline materials
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