Journal ArticleDOI
Comparison of radiation hardness of P-in-N, N-in-N, and N-in-P silicon pad detectors
Manuel Lozano,Giulio Pellegrini,C. Fleta,C. Loderer,Joan Marc Rafi,Miguel Ullan,Francesca Campabadal,Carlos Moreno Martinez,M. Key,Gianluigi Casse,Phillip Allport +10 more
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TLDR
In this article, three different fabrication technologies, P-in-N, N-inN, and Nin-P, were used to simulate the effects of high radiation fluence on the electrical properties of silicon detectors.Abstract:
The very high radiation fluence expected at LHC (Large Hadron Collider) at CERN will induce serious changes in the electrical properties of the silicon detectors that will be used in the internal layers of the experiments (ATLAS, CMS, LHCb). To understand the influence of the fabrication technology in the radiation-induced degradation, silicon detectors were fabricated simultaneously with the three different possible technologies, P-in-N, N-in-N, and N-in-P, on standard and oxygenated float-zone silicon wafers. The diodes were irradiated with protons to fluences up to 10/sup 15/ cm/sup -2/. The measurements of the electrical characteristics, current-voltage and capacitance-voltage, are presented for the detectors manufactured with the three technologies. In terms of alpha factor (leakage current) the three technologies behave similarly. In terms of beta factor (effective doping concentration) N-in-P devices show the best performances.read more
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Journal ArticleDOI
Numerical Simulation of Radiation Damage Effects in p-Type and n-Type FZ Silicon Detectors
TL;DR: In this article, a comprehensive analysis of the variation of the effective doping concentration (Neff), the leakage current density and the charge collection efficiency as a function of the fluence has been performed using the Synopsys T-CAD device simulator.
Journal ArticleDOI
Radiation Effects in Optoelectronic Devices
TL;DR: In this article, the main emphasis is on displacement and total dose damage under conditions that are representative of various space missions, but the mechanisms for degradation in space are also applicable to other environments, such as nuclear reactors, and the extremely high-energy particles associated with the Large Hadron Collider at CERN.
Journal ArticleDOI
Simulations of radiation-damaged 3D detectors for the Super-LHC
David Pennicard,Giulio Pellegrini,Celeste Fleta,Richard Bates,Val O'Shea,C. Parkes,Nicola Tartoni +6 more
TL;DR: In this paper, the performances of various 3D detector structures are simulated with up to 1 × 10 16 ǫ-1 MeV-n eq / cm 2 radiation damage.
Journal ArticleDOI
Simulation Results From Double-Sided 3-D Detectors
David Pennicard,Giulio Pellegrini,Manuel Lozano,Richard Bates,C. Parkes,Val O'Shea,V.. Wright +6 more
TL;DR: In this article, a double-sided 3D solid-state detector structure is proposed to simplify the 3D fabrication process, where electrode columns of different doping types are etched from opposite sides of the substrate, with neither set of columns passing through the full substrate thickness.
Journal ArticleDOI
Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations
Francesco Moscatelli,Daniele Passeri,Arianna Morozzi,Roberto Mendicino,G.-F. Dalla Betta,Gian Mario Bilei +5 more
TL;DR: In this paper, a combined TCAD radiation damage modeling scheme, featuring both bulk and surface radiation damage effects, was proposed for the analysis of silicon detectors aimed at the High Luminosity LHC.
References
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Journal ArticleDOI
Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration
G. Lindström,M. Ahmed,Sebastiano Albergo,Phillip Allport,D.F. Anderson,Ladislav Andricek,M. Angarano,Vincenzo Augelli,N. Bacchetta,P. Bartalini,Richard Bates,U. Biggeri,G. M. Bilei,Dario Bisello,D. Boemi,E. Borchi,T. Botila,T. J. Brodbeck,Mara Bruzzi,T. Budzyński,P. Burger,Francesca Campabadal,Gianluigi Casse,E. Catacchini,A. Chilingarov,Paolo Ciampolini,Vladimir Cindro,M. J. Costa,Donato Creanza,Paul Clauws,C. Da Via,Gavin Davies,W. De Boer,Roberto Dell'Orso,M. De Palma,B. Dezillie,V. K. Eremin,O. Evrard,Giorgio Fallica,Georgios Fanourakis,H. Feick,Ettore Focardi,Luis Fonseca,E. Fretwurst,J. Fuster,K. Gabathuler,Maurice Glaser,Piotr Grabiec,E. Grigoriev,Geoffrey Hall,M. Hanlon,F. Hauler,S. Heising,A. Holmes-Siedle,Roland Horisberger,G. Hughes,Mika Huhtinen,I. Ilyashenko,Andrew Ivanov,B.K. Jones,L. Jungermann,A. Kaminsky,Z. Kohout,Gregor Kramberger,M Kuhnke,Simon Kwan,F. Lemeilleur,Claude Leroy,M. Letheren,Z. Li,Teresa Ligonzo,Vladimír Linhart,P.G. Litovchenko,Demetrios Loukas,Manuel Lozano,Z. Luczynski,Gerhard Lutz,B. C. MacEvoy,S. Manolopoulos,A. Markou,C Martinez,Alberto Messineo,M. Mikuž,Michael Moll,E. Nossarzewska,G. Ottaviani,Val O'Shea,G. Parrini,Daniele Passeri,D. Petre,A. Pickford,Ioana Pintilie,Lucian Pintilie,Stanislav Pospisil,Renato Potenza,C. Raine,Joan Marc Rafi,P. N. Ratoff,Robert Richter,Petra Riedler,Shaun Roe,P. Roy,Arie Ruzin,A.I. Ryazanov,A. Santocchia,Luigi Schiavulli,P. Sicho,I. Siotis,T. J. Sloan,W. Slysz,Kristine M. Smith,M. Solanky,B. Sopko,K. Stolze,B. Sundby Avset,B. G. Svensson,C. Tivarus,Guido Tonelli,Alessia Tricomi,Spyros Tzamarias,Giusy Valvo,A. Vasilescu,A. Vayaki,E. M. Verbitskaya,Piero Giorgio Verdini,Vaclav Vrba,Stephen Watts,Eicke R. Weber,M. Wegrzecki,I. Węgrzecka,P. Weilhammer,R. Wheadon,C.D. Wilburn,I. Wilhelm,R. Wunstorf,J. Wüstenfeld,J. Wyss,K. Zankel,P. Zabierowski,D. Žontar +139 more
TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.
Radiation damage in silicon particle detectors: Microscopic defects and macroscopic properties
TL;DR: In this paper, the authors proposed a method to improve the radiation tolerance of silicon microstrip and pixel detectors in elementary particle collision experiments (e.g., ATLAS, CMS, LHCb and HERA-B) where radiation damage of the detector bulk material leads to severe deterioration of detector properties.
Journal ArticleDOI
Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon
TL;DR: In this paper, the degradation of the electrical properties of silicon detectors exposed to 24 GeV/c protons were studied using pad diodes made from different silicon materials, including high-grade p-type and n-type substrates.
Journal ArticleDOI
Charge collection and charge sharing in heavily irradiated n-side read-out silicon microstrip detectors
TL;DR: In this paper, a p-side read-out (p-in-n) and an n-sensor read out (n−in−n) strip detector with identical strip geometry and a wafer thickness of 200μm were simultaneously and inhomogenously irradiated to a maximum fluence of 7×10 14 proton cm −2 with 24 ǫ c −1 protons.
Journal ArticleDOI
Silicon wafer oxygenation from SiO2 layers for radiation hard detectors
Luis Fonseca,Manuel Lozano,Francesca Campabadal,C. Martı́nez,Miguel Ullan,B.S. Avset,Arie Ruzin,F. Lemeilleur,E. Nossarzewska-Orlowska +8 more
TL;DR: In this paper, different thermal processes aimed at obtaining oxygen enriched silicon for the fabrication of radiation hard detectors have been tested, and attention has also been paid to carbon introduction during processing since, high concentrations of this element has been proved deleterious.
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