Proceedings ArticleDOI
Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
Subramanian Balakumar,T. Wei,C. H. Tung,Guo-Qiang Lo,H. Nguyen,C. Fong,Ajay Agarwal,Rajesh Kumar,N. Balasubramanian,Sungjoo Lee,Dim-Lee Kwong +10 more
- pp 301-305
TLDR
In this article, the accumulation and diffusion mechanism is found to be dependent on the thermal environment, and SiGe layers with high Ge content with proper interface is also achieved for the first time and presented in this article.Abstract:
It is known that Ge condensation is achieved by thermal oxidation of the SiGe layer whereby Si oxidizes faster as compared to Ge, and the Ge atoms are rejected from the oxide into the SiGe layer below. As the Ge diffusion and accumulation varies with gas flow and temperature, detailed investigations are carried out and process conditions are optimized in this work. The accumulation and diffusion mechanism is found to be dependent on the thermal environment. Further to that, SiGe layers with high Ge content with proper interface is also achieved for the first time and presented in this article. SiGe on bulk Si with 30% and above 50% Ge content are fabricated using this technique for the first timeread more
Citations
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References
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Journal ArticleDOI
Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si
Eugene A. Fitzgerald,Ya-Hong Xie,Don Monroe,P.J. Silverman,J. M. Kuo,Ahmet Refik Kortan,F. A. Thiel,B. E. Weir +7 more
TL;DR: In this article, a large lattice constant on Si has been obtained by growing compositionally graded GexSi1−x on Si, and these buffer layers have been characterized with electron-beam-induced current, transmission electron microscopy and x-ray diffraction to determine the extent of relaxation, threading dislocation density, the surface morphology, and the optical properties.
Journal ArticleDOI
Si/SiGe heterostructures: from material and physics to devices and circuits
TL;DR: In this paper, the authors present a review of the material properties, growth techniques, band structure and the main electronic devices of the Si/SiGe heterostructure system, in particular, the important device technologies in mainstream microelectronics.
Journal ArticleDOI
Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique
TL;DR: In this paper, a strained Ge-on-insulator (GOI) structure with a 7-nm-thick Ge layer was fabricated for applications to high-speed transistors, which exhibited a single-crystal structure with the identical orientation to an original SOI substrate and a smooth Ge/SiO2 interface.
Journal ArticleDOI
A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs
TL;DR: In this article, a novel fabrication technique for relaxed and thin SiGe layers on buried oxide (BOX) layers, i.e., SiGe on insulator (SGOI), with a high Ge fraction is proposed and demonstrated for application to strained-Si metal-oxide-semiconductor field effect transistors (MOSFETs).
Journal ArticleDOI
Crosshatching on a SiGe film grown on a Si(001) substrate studied by Raman mapping and atomic force microscopy
TL;DR: The morphology, stress, and composition distributions of the crosshatch pattern on a SiGe film grown on a substrate using a low-temperature Si buffer are studied by atomic force and Raman microscopies.