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Graphene-Based Ambipolar RF Mixers

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TLDR
In this article, the authors demonstrate the use of the ambipolar-transport properties of graphene for the fabrication of a new kind of RF mixer device, which can effectively suppress odd-order intermodulations and lead to lower spurious emissions in the circuit.
Abstract
The combination of the unique properties of graphene with new device concepts and nanotechnology can overcome some of the main limitations of traditional electronics in terms of maximum frequency, linearity, and power dissipation. In this letter, we demonstrate the use of the ambipolar-transport properties of graphene for the fabrication of a new kind of RF mixer device. Due to the symmetrical ambipolar conduction in graphene, graphene-based mixers can effectively suppress odd-order intermodulations and lead to lower spurious emissions in the circuit. The mixer operation was demonstrated at a frequency of 10 MHz using graphene grown by chemical vapor deposition on a Ni film and then transferred to an insulating substrate. The maximum operating frequency was limited by the device geometry and the measurement setup, and a high-quality factor was observed with a third-order intercept point of +13.8 dBm.

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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Andrea C. Ferrari, +68 more
- 04 Mar 2015 - 
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
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Electronics based on two-dimensional materials

TL;DR: A review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches and the performance limits and advantages, when exploited for both digital and analog applications.
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Integrated Circuits Based on Bilayer MoS2 Transistors

TL;DR: This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology based on the semiconducting nature of molybdenum disulfide.
Journal ArticleDOI

Wafer-Scale Graphene Integrated Circuit

TL;DR: A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer.
Journal ArticleDOI

Graphene: Synthesis and applications

TL;DR: Graphene has been attracting enormous attention in the scientific community as discussed by the authors, since the demonstration of its easy isolation by the exfoliation of graphite in 2004 by Novoselov, Geim and co-workers.
References
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Journal ArticleDOI

Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
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Ultrahigh electron mobility in suspended graphene

TL;DR: In this paper, a single layer graphene was suspended ∼150nm above a Si/SiO2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching.
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Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition

TL;DR: The transparency, conductivity, and ambipolar transfer characteristics of the films suggest their potential as another materials candidate for electronics and opto-electronic applications.
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100-GHz Transistors from Wafer-Scale Epitaxial Graphene

TL;DR: The high-frequency performance of these epitaxial graphene transistors exceeds that of state-of-the-art silicon transistors of the same gate length.
Journal ArticleDOI

Operation of Graphene Transistors at Gigahertz Frequencies

TL;DR: Graphene transistors operating at high frequencies (gigahertz) have been fabricated and their characteristics analyzed, indicating a FET-like behavior for graphene transistors.
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