Journal ArticleDOI
Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
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TLDR
In this paper, a physical model involving the breaking of the ≡ Si s H bonds was proposed to explain the observed time dependence of MOSFET degradation and the observed channel field.Abstract:
Evidence suggests that MOSFET degradation is due to interface-states generation by electrons having 3.7 eV and higher energies. This critical energy and the observed time dependence is explained with physical model involving the breaking of the ≡ Si s H bonds. The device lifetime τ is proportional to I_{sub}^{-2.9}I_{d}^{1.9}\Delta V_{t}^{1.5} . If I sub is large because of small L or large V d , etc., τ will be small. I sub (and possibly light emission) is thus a powerful predictor of τ. The proportionality constant has been found to vary by a factor of 100 for different technologies, offering hope for substantially better reliability through future improvements in dielectric /interface technologies. A simple physical model can relate the channel field E m to all the device parameters and bias voltages. Its use in interpreting and guiding hot-electron scaling are described. LDD structures can reduce E m and I sub and, when properly designed, reduce device degradation.read more
Citations
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Journal ArticleDOI
A new test structure for direct measurement of hot-carrier stress effects on CMOS circuit performance
S.C. Hu,M.P. Brassington +1 more
TL;DR: In this article, a test procedure is described that is used for the direct measurement of hot-carrier stress effects on CMOS circuit performance, and it is observed that conventional lifetime predictions based on shifts in device DC parameters are too pessimistic compared to the degradation in circuit switching speed.
Journal ArticleDOI
Low voltage CCD image sensor with optimized reset operation
TL;DR: A charge coupled device (CCD) image sensor operating with 3.0 V-reset has been developed using a charge injection to the gate dielectrics of a MOS structure, which sets reference voltage and holds the signal charge to be detected.
Proceedings ArticleDOI
Studies of the critical LDD area for HCI improvement
TL;DR: In this paper, a 10 times improvement in hot carrier injection (HCI) DC lifetime from LDD implant optimization was shown, attributed to the mechanisms of reduction and departure of high electrical field from the drain area.
Journal ArticleDOI
Simulation of substrate hot-electron injection
TL;DR: In this paper, a trapped charge model was used to simulate voltage versus stress-time behavior in thin oxide and interface state generation using a constant current stressing technique, and the model can serve as the basis for improved understanding of the more complex phenomenon of channel hot-carrier injection in MOS transistors.
Proceedings ArticleDOI
Hot carrier effects in trench-based integrated power transistors
TL;DR: In this paper, anomalous hot carrier effects observed in vertically integrated trench-based (TB-MOS) power transistors are reported for the first time, and a degradation model is proposed.
References
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Problems related to p-n junctions in silicon
TL;DR: In this article, a simplified model of secondary ionization, avalanche breakdown and microplasma phenomena in p-n junctions was proposed, in which holes and electrons have identical properties described by four constants: generation of highest energy or Raman phonons, energy E R and mean-free-path L R ; ionization or electron-hole pair production, threshold carrier energy E i and mean free path L i.
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Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
Kjell Jeppson,Christer Svensson +1 more
TL;DR: A detailed study of the increase of the number of surface traps in MOS structures after NBS at temperatures (25-125°C) and fields (400-700 MV/m) comparable to those used in MNOS devices is presented in this article.
Journal ArticleDOI
An empirical model for device degradation due to hot-carrier injection
E. Takeda,N. Suzuki +1 more
TL;DR: In this article, an empirical model for device degradation due to hot-carrier injection in submicron n-channel MOSFET's is presented, and the relationship between device degradation, drain voltage, and substrate current is clarified on the basis of experiments and modeling.
Journal ArticleDOI
Photon Emission from Avalanche Breakdown in Silicon
A. G. Chynoweth,K. G. McKay +1 more
TL;DR: In this article, it was shown that the number of light spots increases with the current rather than individual spots growing brighter, and that all the breakdown current is carried through the junction by these localized light-emitting spots.
Journal ArticleDOI
Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents
TL;DR: In this article, a series of experiments designed to characterize the charging effect of thermal SiO2 films with water was conducted. And they found that if water is diffused into a SiO 2 film, water related centers are formed which act like electron traps with capture cross section of approximately 1.5 × 10−17 cm2.