Journal ArticleDOI
Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
Reads0
Chats0
TLDR
In this paper, a physical model involving the breaking of the ≡ Si s H bonds was proposed to explain the observed time dependence of MOSFET degradation and the observed channel field.Abstract:
Evidence suggests that MOSFET degradation is due to interface-states generation by electrons having 3.7 eV and higher energies. This critical energy and the observed time dependence is explained with physical model involving the breaking of the ≡ Si s H bonds. The device lifetime τ is proportional to I_{sub}^{-2.9}I_{d}^{1.9}\Delta V_{t}^{1.5} . If I sub is large because of small L or large V d , etc., τ will be small. I sub (and possibly light emission) is thus a powerful predictor of τ. The proportionality constant has been found to vary by a factor of 100 for different technologies, offering hope for substantially better reliability through future improvements in dielectric /interface technologies. A simple physical model can relate the channel field E m to all the device parameters and bias voltages. Its use in interpreting and guiding hot-electron scaling are described. LDD structures can reduce E m and I sub and, when properly designed, reduce device degradation.read more
Citations
More filters
Journal ArticleDOI
On the accuracy of current TCAD hot carrier injection models in nanoscale devices
Alban Zaka,Alban Zaka,Alban Zaka,Quentin Rafhay,Matteo Iellina,Pierpaolo Palestri,Raphael Clerc,Denis Rideau,Davide Garetto,Erwan Dornel,Julien Singer,G. Pananakakis,Clement Tavernier,Herve Jaouen +13 more
TL;DR: In this paper, the authors compared the results obtained by the Fiegna Model, LEM, and the recently implemented Spherical Harmonics Expansion of the Boltzman's Transport Equation (SHE) to rigorous Monte Carlo (MC) results in homogeneous and device conditions.
Journal ArticleDOI
An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect
TL;DR: An analytical threshold voltage model of NMOSFETs including the effect of hot-carrier-induced interface charges is presented and successfully verified using simulation data obtained from TCAD (technology-based computer-aided design).
Book ChapterDOI
Physical Aspects of Cell Operation and Reliability
Luca Selmi,Claudio Fiegna +1 more
TL;DR: This chapter overviews the basic physical effects involved in programming and erasing of Flash memory cells, to provide the background for a deeper understanding of their operation and reliability.
Journal ArticleDOI
Gate Voltage Influence on the Channel Hot-Carrier Degradation of High- $k$ -Based Devices
Esteve Amat,Thomas Kauerauf,Robin Degraeve,Rosana Rodriguez,Montserrat Nafria,Xavier Aymerich,Guido Groeseneken +6 more
TL;DR: In this article, a new model to describe the CHC degradation behavior in n-channel metal-oxide field effect transistors, based on the dominant role of the gate voltage into the total CHC stress, is presented.
Proceedings ArticleDOI
Hot carrier degradation in novel strained-Si nMOSFETs
M.F. Lu,Sinclair Chiang,Alex Liu,S. Huang-Lu,M. S. Yeh,J. R. Hwang,T. H. Tang,Wei-Tsun Shiau,M.C. Chen,Tahui Wang +9 more
TL;DR: In this paper, the authors revealed the HCI degradation of strained-Si devices, which also can be correlated to I/sub b/I/sub d/, were worse than conventional bulk Si devices.
References
More filters
Journal ArticleDOI
Problems related to p-n junctions in silicon
TL;DR: In this article, a simplified model of secondary ionization, avalanche breakdown and microplasma phenomena in p-n junctions was proposed, in which holes and electrons have identical properties described by four constants: generation of highest energy or Raman phonons, energy E R and mean-free-path L R ; ionization or electron-hole pair production, threshold carrier energy E i and mean free path L i.
Journal ArticleDOI
Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
Kjell Jeppson,Christer Svensson +1 more
TL;DR: A detailed study of the increase of the number of surface traps in MOS structures after NBS at temperatures (25-125°C) and fields (400-700 MV/m) comparable to those used in MNOS devices is presented in this article.
Journal ArticleDOI
An empirical model for device degradation due to hot-carrier injection
E. Takeda,N. Suzuki +1 more
TL;DR: In this article, an empirical model for device degradation due to hot-carrier injection in submicron n-channel MOSFET's is presented, and the relationship between device degradation, drain voltage, and substrate current is clarified on the basis of experiments and modeling.
Journal ArticleDOI
Photon Emission from Avalanche Breakdown in Silicon
A. G. Chynoweth,K. G. McKay +1 more
TL;DR: In this article, it was shown that the number of light spots increases with the current rather than individual spots growing brighter, and that all the breakdown current is carried through the junction by these localized light-emitting spots.
Journal ArticleDOI
Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents
TL;DR: In this article, a series of experiments designed to characterize the charging effect of thermal SiO2 films with water was conducted. And they found that if water is diffused into a SiO 2 film, water related centers are formed which act like electron traps with capture cross section of approximately 1.5 × 10−17 cm2.