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Multidimensional device architectures for efficient power electronics

Yuhao Zhang, +2 more
- 01 Nov 2022 - 
- Vol. 5, Iss: 11, pp 723-734
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TLDR
A review of multidimensional device architectures for power electronics can be found in this article , where the performance limits, scaling and material figure of merits of the different architectures are discussed.
Abstract
Power semiconductor devices are key to delivering high-efficiency energy conversion in power electronics systems, which is critical in efforts to reduce energy loss, cut carbon dioxide emissions and create more sustainable technology. Although the use of wide or ultrawide-bandgap materials will be required to develop improved power devices, multidimensional architectures can also improve performance, regardless of the underlying material technology. In particular, multidimensional device architectures—such as superjunction, multi-channel and multi-gate technologies—can enable advances in the speed, efficiency and form factor of power electronics systems. Here we review the development of multidimensional device architectures for efficient power electronics. We explore the rationale for using multidimensional architectures and the different architectures available. We also consider the performance limits, scaling and material figure of merits of the architectures, and identify key technological challenges that need to be addressed to realize the full potential of the approach. This Review examines the use of multidimensional architectures—such as superjunction, multi-channel and multi-gate technologies—in power electronics devices, exploring the performance limits, scaling and material figure of merits of the different architectures.

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Citations
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2.5 kV Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Rectifier With Graded Junction Termination Extension

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Recent progress of Ga2O3 power technology: large-area devices, packaging and applications

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Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

TL;DR: In this paper , the authors provide a timely review of the thermal management of widebandgap and ultra-wide bandgap power devices with an emphasis on packaged devices, highlighting the pressing needs for device-package electrothermal co-design and high-temperature packages that can withstand the high electric fields expected in UWBG devices.
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Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching

TL;DR: In this paper , the gate dynamic breakdown voltage of Schottky-type p-gate GaN HEMTs in power converters is characterized by a new circuit method to characterize the gate dynamics.

2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension

TL;DR: In this article , a junction termination extension (JTE) comprising multiple layers of sputtered p-type nickel oxide (NiO) was proposed to enable a graded decrease in effective charge density away from the main junction.
References
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BookDOI

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TL;DR: In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.
Journal ArticleDOI

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TL;DR: In this paper, a self-aligned double-gate MOSFET, FinFET was proposed by using boron-doped Si/sub 04/Ge/sub 06/ as a gate material.
Journal ArticleDOI

GaN-on-Si Power Technology: Devices and Applications

TL;DR: Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented and the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated.
Journal ArticleDOI

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TL;DR: The technology progress of SiC power devices and their emerging applications are reviewed and the design challenges and future trends are summarized.
Journal ArticleDOI

The 2018 GaN power electronics roadmap

Hiroshi Amano, +64 more
- 26 Mar 2018 - 
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.