Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Journal ArticleDOI
Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors
Timur V. Malin,D. S. Milakhin,I. A. Aleksandrov,V. E. Zemlyakov,V. I. Egorkin,A. A. Zaitsev,D. Yu. Protasov,D. Yu. Protasov,A. S. Kozhukhov,B. Ya. Ber,D. Yu. Kazantsev,Vladimir G. Mansurov,K. S. Zhuravlev,K. S. Zhuravlev +13 more
TL;DR: In this paper, intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy.
The Influence of Defects and Traps on the Optical Properties of Eu ions in GaN
TL;DR: In this paper, the authors propose a method to solve the problem of "uniformity" and "uncertainty" in the context of health care, and propose a solution.
Book ChapterDOI
Chapter 2 Growth of III-V Nitrides by Molecular Beam Epitaxy
TL;DR: In this paper, the authors discuss the growth of III-V nitrides by molecular beam epitaxy (MBE) and highlight the requirement of maintaining an ultrahigh-vacuum environment while simultaneously improving the throughput through the design of MBE systems that comprises of multiple chambers separated by gate valves.
Journal ArticleDOI
The convergence of longitudinal excitons onto the Γ5 transverse exciton in GaN and the thermal activation energy of longitudinal excitons.
TL;DR: The crystal orientation dependence of GaN excitons was investigated via the photoluminescence (PL) technique and fundamental concepts for applications such as vertical cavity surface-emitting lasers (VCSELs) and polariton lasers are presented.
Journal ArticleDOI
Method to probe the electrical activity of dislocations in non-intentionally doped n-GaN
TL;DR: In this paper, a method to probe the electrical activity of dislocations in non-intentionally doped n-GaN epitaxial layers based on the study of their sub-band gap photoconductivity, monitoring their electron concentration and mobility is presented.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
Journal ArticleDOI
The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
Journal ArticleDOI
LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.