Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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The Effect of Mg Doping on Optical and Structural Properties of GaN
TL;DR: In this paper, the impact of Mg incorporation on structural, morphological and optical properties of GaN was investigated, and it was shown that Mg is the most commonly used p-type dopant for GaN.
Journal ArticleDOI
Occupation statistics of the 5/7-atom dislocation core structure within n-type indium nitride
Erfan Baghani,Stephen K. O’Leary +1 more
TL;DR: In this article, the occupation statistics of the different ionization states of the 5/7-atom dislocation defect sites were obtained as a function of the bulk doping concentration within wurtzite InN.
Journal ArticleDOI
The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
V. V. Lundin,A. V. Sakharov,E. E. Zavarin,D. A. Zakgeim,Andrey E. Nikolaev,Pavel N. Brunkov,M. A. Yagovkina,A. F. Tsatsul’nikov +7 more
TL;DR: In this paper, it was shown that using GaN buffer layers with a better crystal perfection and more planar surface results in the electron mobility in the 2D channel for carriers becoming 1.2-1.5 times higher.
Electrical properties of dislocations within the nitride based semiconductors gallium nitride and indium nitride
TL;DR: In this paper, the effect of threading dislocation lines on free electron concentration and electron mobility in gallium nitride and indium-nitride semiconductors is investigated.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
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LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.